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首页> 外文期刊>Journal of Crystal Growth >Growth of high-quality cubic GaN on Si (001) coated with ultra-thin flat SiC by plasma-assisted molecular-beam epitaxy
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Growth of high-quality cubic GaN on Si (001) coated with ultra-thin flat SiC by plasma-assisted molecular-beam epitaxy

机译：等离子体辅助分子束外延生长在超薄扁平SiC包覆的Si（001）上高质量立方GaN的生长

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摘要

Cubic GaN films were grown on Si (001) coated with an ultra-thin flat SiC buffer layer under both Ga-rich and N-rich conditions. The SiC buffer layer (thickness of about 2.5 nm) was grown by carbonization of Si (001) substrates in C_2 H_2 (pressure of 5 x 10~(-6) Torr) at 970℃. The GaN films prepared under the Ga-rich condition had a local atomically smooth surface. High-resolution transmission electron microscopy (TEM) showed that the main defects in the GaN films are stacking faults along the [111] and [111] directions. Plan-view TEM showed that the dislocation density within grains was much lower than the overall dislocation density in the GaN films. The dislocation density within grains was about 4 x 105~5cm~(-2). X-ray diffraction (XRD) and TEM showed that the GaN films had a mosaic structure. The full-width at half-maximum of the (002) XRD peak of a 0.82-μm-thick film was 19min, one of the lowest values reported so far for cubic GaN films. And the GaN films prepared under both Ga-rich and N-rich conditions showed a strong near-band-edge photoluminescence. Yellow-band luminescence and donor-acceptor recombination peaks were also detected when the GaN films contained more extended defects and/or native-point defects.
机译：在富含Ga和富含N的条件下，在涂覆有超薄平坦SiC缓冲层的Si（001）上生长立方GaN膜。 SiC缓冲层（厚度约2.5 nm）是通过在970℃下于C_2 H_2（压力为5 x 10〜（-6）Torr）中碳化Si（001）衬底而生长的。在富Ga条件下制备的GaN膜具有局部原子光滑表面。高分辨率透射电子显微镜（TEM）显示GaN膜的主要缺陷是沿[111]和[111]方向的堆叠缺陷。平面TEM显示，晶粒内的位错密度远低于GaN膜的总位错密度。晶粒内的位错密度约为4×105〜5cm〜（-2）。 X射线衍射（XRD）和TEM显示GaN膜具有镶嵌结构。厚度为0.82μm的薄膜的（002）XRD峰的半峰全宽为19min，是迄今为止报道的立方氮化镓薄膜的最低值之一。在富Ga和富N条件下制备的GaN膜均显示出很强的近带边缘光致发光。当GaN膜包含更多延伸的缺陷和/或本征点缺陷时，还检测到黄带发光峰和施主-受体复合峰。

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