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首页> 外文期刊>Journal of Crystal Growth >X-ray double-crystal characterization of the strain relaxation in GaAs/GaN_xAs_(1-x)/GaAs(001) sandwiched structures
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X-ray double-crystal characterization of the strain relaxation in GaAs/GaN_xAs_(1-x)/GaAs(001) sandwiched structures

机译：GaAs / GaN_xAs_（1-x）/ GaAs（001）夹心结构中的应变弛豫的X射线双晶体表征

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摘要

An X-ray diffraction method, estimating the strain relaxation in an ultrathin layer, has been discussed by using kinematic and dynamical X-ray diffraction (XRD) theory. The characteristic parameter ΔΩ, used as the criterion of the strain relaxation in ultrathin layers, is deduced theoretically. It reveals that ΔΩ should be independent of the layer thickness in a coherently strained layer. By this method, we characterized our ultrathin GaN_xAs_(1-x) samples with N contents up to 5%. XRD measurements show that our GaN_xAs_(1-x) layers are coherently strained on GaAs even for such a large amount of N. Furthermore, a series of GaN_xAs_(1-x) samples with same N contents but different layer thicknesses were also characterized. It was found that the critical thickness (L_c) of GaNAs in the GaAs/GaNAs/GaAs structures determined by XRD measurement was 10 times smaller than the theoretical predictions based on the Matthews and Blakeslee model. This result was also confirmed by in situ observation of reflection high-energy electron diffraction (RHEED) and photoluminescence (PL) measurements. RHEED observation showed that the growth mode of GaNAs layer changed from 2D- to 3D-mode as the layer thickness exceeded L_c. PL measurements showed that the optical properties of GaNAs layers deteriorated rapidly as the layer thickness exceeded L_c.
机译：已经通过使用运动学和动态X射线衍射（XRD）理论讨论了一种X射线衍射方法，该方法用于估计超薄层中的应变松弛。理论上推导了用作超薄层应变松弛准则的特性参数ΔΩ。结果表明，ΔΩ应该与相干应变层中的层厚无关。通过这种方法，我们表征了N含量高达5％的超薄GaN_xAs_（1-x）样品。 XRD测量表明，即使对于如此大量的N，我们的GaN_xAs_（1-x）层也会在GaAs上相干应变。此外，还对一系列具有相同N含量但层厚度不同的GaN_xAs_（1-x）样品进行了表征。发现通过XRD测量确定的GaAs / GaNAs / GaAs结构中GaNA的临界厚度（L_c）比基于Matthews和Blakeslee模型的理论预测小10倍。通过反射高能电子衍射（RHEED）和光致发光（PL）测量的原位观察也证实了该结果。 RHEED观察表明，随着层厚度超过L_c，GaNAs层的生长模式从2D模式变为3D模式。 PL测量表明，随着层厚度超过L_c，GaNAs层的光学性能迅速下降。

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