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首页> 外文期刊>Journal of Crystal Growth >Study of interface reactions between Si and GaN at high temperatures using scanning photoelectron microscopy and X-ray absorption spectroscopy
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Study of interface reactions between Si and GaN at high temperatures using scanning photoelectron microscopy and X-ray absorption spectroscopy

机译：扫描光电子显微镜和X射线吸收光谱法研究高温下Si与GaN之间的界面反应

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Scanning photoelectron microscopy (SPEM) and X-ray absorption spectroscopy have been used to study interface reactions between Si and GaN when GaN is deposited on nitridated silicon substrates at high temperatures. The results show that the interface reactions between silicon and GaN are strongly dependent on the reaction temperature with the more severe reactions occurring at higher temperatures. In addition to the observation of the direct reaction of nitrogen with the Si to form silicon nitride at the interface, the chemical maps obtained with SPEM indicate that Si migrates to the top surface of the GaN layers. The migration of Si to the surface results in formation of SiN_x on the top surface and in severe roughening of the GaN layers deposited at 950 and 1010℃. X-ray absorption data indicate that the hexagonal structure forms at higher temperature while the cubic form of GaN is the dominant structure at low temperature. The three-dimensional growth of the hexagonal structure appears to be responsible for enhancement of the Si migration.
机译：扫描光电子显微镜（SPEM）和X射线吸收光谱法已用于研究GaN在高温下沉积在氮化硅衬底上时Si与GaN之间的界面反应。结果表明，硅与GaN之间的界面反应在很大程度上取决于反应温度，在更高的温度下会发生更严重的反应。除了观察到氮与硅直接反应在界面处形成氮化硅外，用SPEM获得的化学图还表明硅迁移到GaN层的上表面。 Si迁移到表面会导致在顶表面形成SiN_x，并导致在950和1010℃下沉积的GaN层严重粗糙。 X射线吸收数据表明，六方结构在较高温度下形成，而GaN的立方型在低温下是主要结构。六角形结构的三维生长似乎是导致Si迁移增强的原因。

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