Improvement in wafer temperature uniformity and flow pattern in a lamp heated rapid thermal processor

C.P. Yin; C.C. Hsiao; T.F. Lin

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Improvement in wafer temperature uniformity and flow pattern in a lamp heated rapid thermal processor

机译：灯加热快速热处理器中晶片温度均匀性和流型的改善

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An experimental lamp heated, rapid thermal processor (RTP) for an 8-in single silicon wafer was designed and established to investigate the thermal and flow characteristics in the processing chamber by transient temperature measurement and flow visualization. Experiments were carried out to explore the effects of placing a highly conducting copper plate right below the wafer on the uniformity of the wafer temperature and effects of the showerhead on the resulting flow distribution in the processing chamber. The measured data indicated that adding the copper plate can effectively reduce the nonuniformity of the wafer temperature. Besides, using a showerhead with finer holes in it results in a better flow distribution in the processor.

机译：设计并建立了用于8英寸单硅晶片的实验灯加热快速热处理器（RTP），以通过瞬态温度测量和流动可视化来研究处理室中的热和流动特性。进行实验以探索将高导电性铜板放置在晶片正下方对晶片温度均匀性的影响以及喷头对处理室中所得流量分布的影响。实测数据表明，增加铜板可以有效降低晶片温度的不均匀性。此外，使用带有细孔的莲蓬头可以在处理器中实现更好的流量分配。

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来源
《Journal of Crystal Growth》 |2000年第2期|p.201-210|共10页
作者
C.P. Yin; C.C. Hsiao; T.F. Lin;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
RTP processor; temperature uniformity; flow; convection;

机译：RTP处理器;温度均匀性;流量;对流;

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专利

1. Visualization of vortex flow patterns with a uniformly perforated showerhead in a model lamp heat, single-wafer thermal processor [J] . Cheng TC, Lin TF, Yang JY, Chemical vapor deposition: CVD . 2007,第8期

机译：在模型灯加热单晶片热处理器中使用均匀穿孔的喷头可视化涡流模式
2. Improvement of temperature homogeneity of a silicon wafer heated in a rapid thermal system (RTP: Rapid Thermal Process) by a filtering window [J] . Logerais Pierre-Olivier, Riou Olivier, Delaleux Fabien, Applied thermal engineering: Design, processes, equipment, economics . 2015,第Null期

机译：通过过滤窗口提高在快速热系统（RTP：快速热工艺）中加热的硅晶片的温度均匀性
3. Thermal uniformity of 12-in silicon wafer in linearlyramped-temperature transient rapid thermal processing [J] . Senpuu Lin, Hsin-Sen Chu IEEE Transactions on Semiconductor Manufacturing . 2001,第2期

机译：线性升温温度瞬态快速热处理中12英寸硅片的热均匀性
4. Effect of heating control conditions on temperature distribution in a wafer during rapid thermal processing with lamps (effects of monitoring positions and initial non-uniform temperature distribution) [C] . Shigeki Hirasawa, Tadashi Suzuki, Shigenao Maruyama, 日本伝熱シンポジウム . 2001

机译：用灯快速热加工期间加热控制条件对晶片温度分布的影响（监测位置的效果和初始非均匀温度分布）
5. Measurement and control of silicon wafer temperature and oxide film thickness in rapid thermal processing using in situ ellipsometry. [D] . Sampson, Ronald Kevin. 1992

机译：使用原位椭偏仪在快速热处理中测量和控制硅片温度和氧化膜厚度。
6. Controlling Growth High Uniformity Indium Selenide (In2Se3) Nanowires via the Rapid Thermal Annealing Process at Low Temperature [O] . Ya-Chu Hsu, Yu-Chen Hung, Chiu-Yen Wang 2017

机译：通过低温快速热退火工艺控制生长高均匀性的硒化铟（In2Se3）纳米线
7. Analysis of the Effect of Gas Convection on Temperature Distribution in a Wafer during Rapid Thermal Processing with Lamp Heaters. [O] . Shigeki HIRASAWA, Tadashi SUZUKI, Shigenao MARUYAMA, 2001

机译：灯加热器快速热加工过程中气体对流对晶片温度分布的影响分析。
8. Influence of wavelength-dependent radiation in simulation of lamp-heated rapid thermal processing systems [R] . Ting, A. 1994

机译：波长相关辐射对灯加热快速热处理系统仿真的影响

Improvement in wafer temperature uniformity and flow pattern in a lamp heated rapid thermal processor

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