Formation of InAs quantum dots on low-temperautrue GaAs epi-layer

X.D. Wang; Z.C. Niu; H. Wang

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Formation of InAs quantum dots on low-temperautrue GaAs epi-layer

机译：在低温GaAs外延层上形成InAs量子点

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InAs self-organized quantum dots (QDs) grown on annealed low-temperature GaAs (LT-GaAs) epi-layers andon normal temperature GaAs buffer layers have been compared by transmission electron microscopy (TEM) and photo-luminescence (PL) measurements. TEM evidences that self-organizwed QDs were formed with a smaller size and larger density than that on normal GaAs buffer layers. It is discussed QDs were formed with a smaller size and larger density than that on normal GaAs buffer layers. It is discussed that local tensile surface strain regions that are preferrred sites for InAs islands nucleation are increased in the case of the LT-GaAs buffer layers due to exhibiting As precipitates.

机译：已通过透射电子显微镜（TEM）和光致发光（PL）测量比较了在退火的低温GaAs（LT-GaAs）外延层和常温GaAs缓冲层上生长的InAs自组织量子点（QD）。 TEM证明，与常规GaAs缓冲层相比，自组织量子点具有较小的尺寸和较大的密度。讨论了以比普通GaAs缓冲层小的尺寸和更大的密度形成的量子点。讨论了在LT-GaAs缓冲层的情况下由于表现出As沉淀而增加了InAs岛成核的优选部位的局部拉伸表面应变区域。

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来源
《Journal of Crystal Growth》 |2000年第4期|p.209-213|共5页
作者
X.D. Wang; Z.C. Niu; H. Wang;
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作者单位

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
Quantum dot; Low-temperature GaAs; As precipitates; Annealing; TEM; PL;

机译：量子点低温砷化镓;沉淀退火;TEM;PL;

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机译：InAlGaAs和GaAs组合势垒厚度对MBE生长的InAs / GaAs量子点异质结构堆叠层中点形成持续时间的影响
2. Formation of InAs/AlGaAs/GaAs Nanowire Structures by Self-Organized Rod Growth on InAs Quantum Dots and Their Transport Properties [J] . Masato Ohmori, Pavel Vitushinskiy, Tomoya Kojima, _Applied Physics Express . 2013,第4期

机译：InAs量子点上自组织棒生长形成InAs / AlGaAs / GaAs纳米线结构及其传输特性
3. Evolution of InAs quantum dots and wetting layer on GaAs (001): Peculiar photoluminescence near onset of quantum dot formation [J] . Rahul Kumar, Yurii Maidaniuk, Samir K. Saha, Journal of Applied Physics . 2020,第6期

机译：在GaAs（001）上的inas量子点和润湿层的演变：量子点形成附近的特殊光致发光
4. Formation of InGaAs/GaAs quantum-well dots by using self-assembled InAs quantum dots as stressors [C] . Xiaodong Mu, Yujie J. Ding, Zhiming Wang, Conference on Lasers and Electro-Optics . 2003

机译：通过使用自组装的INAS量子点作为压力源形成InGaAs / GaAs量子阱点
5. Exploring Single Hole States in InAs/GaAs Quantum Dots and Quantum Dot Molecules under 2-D Electric Fields [D] . Ma, Xiangyu. 2018

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6. Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures [O] . Sergii Golovynskyi, Luca Seravalli, Oleksandr Datsenko, 2017

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7. Electronic structure of self-assembled InAs/InP quantum dots: A Comparison with self-assembled InAs/GaAs quantum dots [O] . Gong, Ming, Duan, Kaimin, Li, Chuan-Feng, 2007

机译：自组装Inas / Inp量子点的电子结构：a 与自组装Inas / Gaas量子点的比较
8. Growth and Characterization of Low Density InAs/GaAs Quantum Dots (QD) for Quantum Information Processes [R] . Choi, W. J. 2010

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Formation of InAs quantum dots on low-temperautrue GaAs epi-layer

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