Photoluminescence at up to 2.4 μm wavelengths from GaInAsBi/AlInAs quantum wells

著录项

• 来源
  《Journal of Crystal Growth》 |2014年第1期|116-120|共5页
• 作者

  Renata Butkute; Vaidas Pacebutas; Bronislovas Cechavicius; Ramunas Nedzinskas; Algirdas Selskis; Andrius Arlauskas; Arunas Krotkus;

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• 作者单位

  Center for Physical Sciences and Technology, A. Gostauto 11, Vilnius, Lithuania;

  Center for Physical Sciences and Technology, A. Gostauto 11, Vilnius, Lithuania;

  Center for Physical Sciences and Technology, A. Gostauto 11, Vilnius, Lithuania;

  Center for Physical Sciences and Technology, A. Gostauto 11, Vilnius, Lithuania;

  Center for Physical Sciences and Technology, A. Gostauto 11, Vilnius, Lithuania;

  Center for Physical Sciences and Technology, A. Gostauto 11, Vilnius, Lithuania;

  Center for Physical Sciences and Technology, A. Gostauto 11, Vilnius, Lithuania;

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• 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  A1. Photoluminescence; A3. Molecular beam epitaxy; A3. Quantum wells; B1. GalnAsBi;

  机译：A1。光致发光;A3。分子束外延;A3。量子阱;B1。 n;