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首页> 外文期刊>Journal of Crystal Growth >A modified vacuum directional solidification system of multicrystalline silicon based on optimizing for heat transfer
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A modified vacuum directional solidification system of multicrystalline silicon based on optimizing for heat transfer

机译：基于传热优化的改进型多晶硅定向真空凝固系统

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摘要

In this paper, we proposed a modified vacuum directional solidification system for producing multi-crystalline silicon (mc-Si). A transient numerical model was carried out to simulate the process of mc-Si vacuum directional solidification which cannot be directly monitored. The temperature distribution, melt convection, melt-crystal (m/c) interface and thermal stress have been simulated. Simulation results show that the modified system is particularly suitable for growing high-quality crystal of mc-Si. The thermal stress of the silicon crystal decreases considerably due to the lower temperature gradient by installing a conical insulation unit, the m/c interface keeps slightly convex and the melt flow along the axis direction is relatively stronger by improving the heat transfer. The results of the experiment show that this modified system of mc-Si can obtain better crystal quality than the traditional vacuum directional solidification system.
机译：在本文中，我们提出了一种改进的真空定向凝固系统，用于生产多晶硅（mc-Si）。建立了瞬态数值模型来模拟无法直接监测的mc-Si真空定向凝固过程。模拟了温度分布，熔体对流，熔体晶体（m / c）界面和热应力。仿真结果表明，改进后的系统特别适合于生长高质量的mc-Si晶体。通过安装锥形绝缘装置，由于较低的温度梯度，硅晶体的热应力显着降低，m / c界面保持略微凸出，并且通过改善热传递，沿轴方向的熔体流动相对较强。实验结果表明，与传统的真空定向凝固系统相比，该改进的mc-Si体系可以获得更好的晶体质量。

著录项

  • 来源
    《Journal of Crystal Growth》 |2014年第15期|7-14|共8页
  • 作者

    Xi Yang; Wenhui Ma; Guoqiang Lv; Kuixian Wei; Tao Luo; Daotong Chen;

  • 作者单位

    National Engineering Laboratory for Vacuum Metallurgy, Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming 650093, China,Engineering Research Center for Silicon Metallurgy and Silicon Materials of Yunnan Provincial Universities, Kunming 650093, China;

    National Engineering Laboratory for Vacuum Metallurgy, Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming 650093, China,Engineering Research Center for Silicon Metallurgy and Silicon Materials of Yunnan Provincial Universities, Kunming 650093, China;

    National Engineering Laboratory for Vacuum Metallurgy, Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming 650093, China,Engineering Research Center for Silicon Metallurgy and Silicon Materials of Yunnan Provincial Universities, Kunming 650093, China;

    National Engineering Laboratory for Vacuum Metallurgy, Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming 650093, China,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310000, China;

    National Engineering Laboratory for Vacuum Metallurgy, Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming 650093, China,Engineering Research Center for Silicon Metallurgy and Silicon Materials of Yunnan Provincial Universities, Kunming 650093, China;

    National Engineering Laboratory for Vacuum Metallurgy, Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming 650093, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1. Computer simulation; A1. Crystal morphology; A1. Directional solidification; A1. Heat transfer; A2. Growth from melt;

    机译：A1。计算机仿真;A1。晶体形态A1。定向凝固;A1。传播热量;A2。融化成长;

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