机译:直流磁控溅射铜掺杂ZnO薄膜的微观结构和光学特性
Kumoh National Institute of Technology (KIT), 61 Daehak-ro, Cumi 730-701, South Korea,Daegu Cyeongbuk Institute of Science and Technology (DGIST), 50-1 Sang-Ri, Daegu 711-873, South Korea;
Kumoh National Institute of Technology (KIT), 61 Daehak-ro, Cumi 730-701, South Korea;
Kumoh National Institute of Technology (KIT), 61 Daehak-ro, Cumi 730-701, South Korea;
Daegu Cyeongbuk Institute of Science and Technology (DGIST), 50-1 Sang-Ri, Daegu 711-873, South Korea;
Kumoh National Institute of Technology (KIT), 61 Daehak-ro, Cumi 730-701, South Korea;
Kumoh National Institute of Technology (KIT), 61 Daehak-ro, Cumi 730-701, South Korea;
A1. Doping; A2. Physical vapor deposition processes; B1. Zinc compounds; B2. Nonlinear optic materials;
机译:氧分压对磁控共溅射制备非掺杂和掺杂Cu的ZnO薄膜结构和光学性能的影响
机译:直流磁控溅射制备Ni-Al共掺杂ZnO薄膜的微观结构,光学和电学性质
机译:衬底温度对直流磁控溅射制备ZnO和Al掺杂ZnO薄膜的结构和光学性能的影响
机译:磁控溅射制备的ZnO薄膜光学特性分析
机译:使用不平衡磁控溅射制造适用于薄膜晶体管的掺镓ZNO薄膜。
机译:射频磁控溅射制备(MgAl)共掺杂ZnO薄膜的光电性能研究与研究
机译:使用磁控凝固制备Cu掺杂ZnO膜的特性