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Microstructural analysis and optical characteristics of Cu-doped ZnO thin films prepared by DC magnetron sputtering

机译:直流磁控溅射铜掺杂ZnO薄膜的微观结构和光学特性

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摘要

The study of the process interactions near the surface and bulk area of functional metal oxide semiconductor materials plays an important role for nanodevice application. Especially it is necessary to investigate the morphological, optical and physical properties of the synthesized semiconductor oxides modified by different states of dopant elements because this allows making a compound system with unique characteristics and novel properties. In this work the pure and Cu-doped ZnO (CZO) thin films were deposited on a silicon oxide (SiO_2/Si) substrate by using a direct current reactive magnetron sputtering technique. Synthesized samples were annealed at 500℃, 700℃, and 850℃ temperatures under oxygen atmosphere to obtain a good quality crystal structure. Then microstructural and optical properties of the pure and CZO films are systematically investigated by X-ray diffraction, scanning electronic microscopy, and spectrophotometer. The results indicate that Cu-doped ZnO films show stronger preferred orientation toward the c-axis and lattice mismatch, uniform grain size after doping of Cu. The effect of thermal annealing to morphologic and physical parameters of metal oxide thin films was analyzed as functions of the Cu dopant.
机译:功能金属氧化物半导体材料的表面和主体区域附近的过程相互作用的研究对于纳米器件的应用起着重要的作用。特别地,有必要研究被掺杂元素的不同状态改性的合成半导体氧化物的形态,光学和物理性质,因为这可以使化合物系统具有独特的特性和新颖的特性。在这项工作中,使用直流反应磁控溅射技术将纯铜掺杂的ZnO(CZO)薄膜沉积在氧化硅(SiO_2 / Si)衬底上。将合成的样品在氧气气氛下分别于500℃,700℃和850℃退火,以获得高质量的晶体结构。然后通过X射线衍射,扫描电子显微镜和分光光度计系统地研究纯膜和CZO膜的微观结构和光学性质。结果表明,掺杂Cu后的ZnO薄膜表现出更强的c轴取向和晶格失配,掺杂Cu后晶粒尺寸均匀。分析了热退火对金属氧化物薄膜的形貌和物理参数的影响,作为Cu掺杂剂的功能。

著录项

  • 来源
    《Journal of Crystal Growth》 |2014年第1期|573-576|共4页
  • 作者单位

    Kumoh National Institute of Technology (KIT), 61 Daehak-ro, Cumi 730-701, South Korea,Daegu Cyeongbuk Institute of Science and Technology (DGIST), 50-1 Sang-Ri, Daegu 711-873, South Korea;

    Kumoh National Institute of Technology (KIT), 61 Daehak-ro, Cumi 730-701, South Korea;

    Kumoh National Institute of Technology (KIT), 61 Daehak-ro, Cumi 730-701, South Korea;

    Daegu Cyeongbuk Institute of Science and Technology (DGIST), 50-1 Sang-Ri, Daegu 711-873, South Korea;

    Kumoh National Institute of Technology (KIT), 61 Daehak-ro, Cumi 730-701, South Korea;

    Kumoh National Institute of Technology (KIT), 61 Daehak-ro, Cumi 730-701, South Korea;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1. Doping; A2. Physical vapor deposition processes; B1. Zinc compounds; B2. Nonlinear optic materials;

    机译:A1。掺杂A2。物理气相沉积过程;B1。锌化合物;B2。非线性光学材料;

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