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首页> 外文期刊>Journal of Crystal Growth >Experimental study of grain boundary orientations in multi-crystalline silicon
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Experimental study of grain boundary orientations in multi-crystalline silicon

机译：多晶硅晶界取向的实验研究

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摘要

Some peculiarities of straight and zig-zag grain boundaries in multi-crystalline Si ingots were analyzed by Scanning Electron Microscopy-Electron BackScatter Diffraction (SEM-EBSD) and Three Dimensional (3D) grain boundary reconstruction. In the cases where straight grain boundaries were perpendicular to facing {111} planes in the two neighboring grains, they were found parallel, within the measurement accuracy, to the bisector of the two facing {111} planes. This is in agreement with the theory predicting the existence of Facetted-Facetted grooves during the growth of multicrystalline Si. Another grain boundary was corresponding to the predicted Facetted-Rough groove. It was found that the zig-zag grain boundaries were successively composed of {111} twin planes and (4-bar11)/(011) planes, so that the two grains are always in ∑3 relationship. The phenomenon leading to the formation mechanism for these boundaries remains a subject for research.
机译：通过扫描电子显微镜-电子背散射衍射（SEM-EBSD）和三维（3D）晶界重构，分析了多晶硅晶锭中直形和锯齿形晶界的某些特征。在直的晶界垂直于两个相邻晶粒中的相向{111}平面的情况下，发现它们在测量精度内平行于两个相向{111}平面的等分线。这与预测在多晶硅生长过程中存在多面切面凹槽的理论相一致。另一个晶界对应于预测的刻面粗糙槽。发现之字形晶界是由{111}孪晶面和（4-bar11）/（011）晶面连续组成的，因此两个晶粒始终处于∑3关系。导致这些边界形成机制的现象仍然是研究的主题。

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