Characterization of low angle grain boundary in large sapphire crystal grown by the Kyropoulos method

Yu Guojian; Hu Xiaobo; Wang Xijie; Zong Yanmin; Xu Xiangang

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Characterization of low angle grain boundary in large sapphire crystal grown by the Kyropoulos method

机译：用Kyropoulos方法生长大蓝宝石晶体中低角度晶界的表征

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Low angle grain boundaries (LAGB) are one of the most commonly seen defects in sapphire crystals. In this paper, we have studied the origin, topography and orientation of LAGB in large sapphire crystals grown by the Kyropoulos method through etching, polaroscopy, optical microscopy as well as synchrotron white-beam X-ray topography. The results show that the LAGB starts mainly from the atomic layers mismatch caused by environmental fluctuations. The misorientation angle of the grain boundaries is 2-3 degrees, and the grain boundaries are distributed around < 1 0 (1) over bar 0 > direction. (C) 2014 Elsevier B.V. All rights reserved.

机译：低角度晶界（LAGB）是蓝宝石晶体中最常见的缺陷之一。在本文中，我们通过刻蚀，极谱，光学显微镜以及同步加速器白束X射线形貌研究了用Kyropoulos方法生长的大型蓝宝石晶体中LAGB的起源，形貌和取向。结果表明，LAGB主要由环境波动引起的原子层失配引起。晶界的取向差角度为2-3度，并且晶界在<0 0（1）方向上沿bar 0>方向分布。（C）2014 Elsevier B.V.保留所有权利。

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来源
《Journal of Crystal Growth》 |2014年第1期|59-63|共5页
作者
Yu Guojian; Hu Xiaobo; Wang Xijie; Zong Yanmin; Xu Xiangang;
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作者单位

Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China|SICC Mat Co Ltd, Jinan 250111, Peoples R China;

Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China;

SICC Mat Co Ltd, Jinan 250111, Peoples R China;

SICC Mat Co Ltd, Jinan 250111, Peoples R China;

Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类
关键词
Etching; X-ray topography; Kyropoulos method; Sapphire;

机译：蚀刻;X射线形貌;Kyropoulos法;蓝宝石;

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1. Ti-Doped Sapphire (Al_2O_3) Single Crystals Grown by the Kyropoulos Technique and Optical Characterizations [J] . Nehari Abdeldjelil, Brenier Alain, Panzer Gerard, Crystal growth & design . 2011,第2期

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2. Numerical study on the effect of additional resistive heating and crystal rotation on sapphire single crystals (Al2O3) grown by the Kyropoulos method [J] . Zermout Samir, Mokhtari Faiza, Nehari Abdeldjelil, CrystEngComm . 2018,第35期

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4. LOW-ANGLE AND HIGH-ANGLE GRAIN BOUNDARIES IN AlN/GaN LAYERS GROWN ON (0001) SAPPHIRE BY MBE [C] . Symposium on nitride semiconductors . 1998

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5. Grain boundary structure and solute segregation in titanium-doped sapphire bicrystals. [D] . Taylor, Seth Thomas. 2002

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Characterization of low angle grain boundary in large sapphire crystal grown by the Kyropoulos method

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