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首页> 外文期刊>Journal of Crystal Growth >Formation of compressively strained Si/Si_(1-x)C_x/Si(100) heterostructures using gas-source molecular beam epitaxy
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Formation of compressively strained Si/Si_(1-x)C_x/Si(100) heterostructures using gas-source molecular beam epitaxy

机译：气源分子束外延形成压缩应变Si / Si_（1-x）C_x / Si（100）异质结构

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摘要

With an aim to achieve compressively strained Si in which low hole effective mass is expected, investigations on growth of compressively strained Si/Si_(1-x)C_x/Si(100) heterostructure were carried out using gas-source molecular beam epitaxy (MBE). It was found that crystalline morphology and lattice strain strongly depends on substrate temperature. The compressively-strained Si with smooth surface was successfully realized at 550 ℃. It was found that dislocation is preferentially introduced and precipitations of carbon-related phases are less-pronounced at this substrate temperature. The obtained strain in the top Si layer was in the range of -0.6% to -0.7%, which is expected to be adequate for realization of low hole effective mass.
机译：为了达到预期的低孔有效质量的压缩应变硅，使用气体源分子束外延（MBE）进行了压缩应变Si / Si_（1-x）C_x / Si（100）异质结构的生长研究）。发现晶体形态和晶格应变强烈取决于衬底温度。在550℃成功实现了表面光滑的压缩应变Si。发现在该衬底温度下优先引入位错并且碳相关相的沉淀较少发声。在顶部Si层中获得的应变在-0.6％至-0.7％的范围内，预期这对于实现低空穴有效质量是足够的。

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  • 来源
    《Journal of Crystal Growth》 |2013年第1期|276-281|共6页
  • 作者

    Keisuke Arimoto; Hiroshi Furukawa; Junji Yamanaka; Chiaya Yamamoto; Kiyokazu Nakagawa; Noritaka Usami; Kentarou Sawano; Yasuhiro Shiraki;

  • 作者单位

    Center for Crystal Science and Technology, University of Yamanashi, 7-32 Miyamae-cho, Kofu, Yamanashi 400-8511, Japan;

    Center for Crystal Science and Technology, University of Yamanashi, 7-32 Miyamae-cho, Kofu, Yamanashi 400-8511, Japan;

    Center for Crystal Science and Technology, University of Yamanashi, 7-32 Miyamae-cho, Kofu, Yamanashi 400-8511, Japan;

    Center for Crystal Science and Technology, University of Yamanashi, 7-32 Miyamae-cho, Kofu, Yamanashi 400-8511, Japan;

    Center for Crystal Science and Technology, University of Yamanashi, 7-32 Miyamae-cho, Kofu, Yamanashi 400-8511, Japan;

    Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan;

    Research Center for Silicon Nano-Science, Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Setagaya-ku. Tokyo 158-0082, Japan;

    Research Center for Silicon Nano-Science, Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Setagaya-ku. Tokyo 158-0082, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1. Crystal morphology; A3. Molecular beam epitaxy; B2. Semiconducting Si compounds;

    机译：A1。晶体形态A3。分子束外延;B2。半导体硅化合物;

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