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首页> 外文期刊>Journal of Crystal Growth >Bridgman growth and defect characterization of large diameter mercury indium telluride crystals for near infrared detectors
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Bridgman growth and defect characterization of large diameter mercury indium telluride crystals for near infrared detectors

机译：用于近红外探测器的大直径碲化汞铟晶体的Bridgman生长和缺陷表征

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摘要

Novel Hg_3In_2Te_6 (MIT) single crystals with 30 mm in diameter and 110 mm in length have been reproducibly grown by the vertical Bridgman (VB) method. The crystalline phase was confirmed by X-ray diffraction to be free of transformation. Rocking curves using a double-crystal X-ray diffract-ometer showed that the full widths at half maximum of the as-grown MIT crystals were in the range of 150-317 arc sec. The electrical resistivity, carrier density and mobility from Hall measurements at room temperature were 1.79 × 10~3Ωcm, 1.01 × 10~(13)cm~3 and 3.44 × 10~2cm~2 V~-1 s~-1respectively. The existing defects in the as-grown MIT crystals were displayed and the average etch pits density (EPD) using the modified Chen etchant solution was (2-6) × 10~4cm~2 in the whole ingot.
机译：通过垂直布里奇曼（VB）方法可重现地生长了直径30 mm，长度110 mm的新型Hg_3In_2Te_6（MIT）单晶。通过X射线衍射确认结晶相无相变。使用双晶体X射线衍射仪的摇摆曲线表明，所生长的MIT晶体的半峰全宽在150-317弧秒的范围内。室温下霍尔测量得到的电阻率，载流子密度和迁移率分别为1.79×10〜3Ωcm，1.01×10〜（13）cm〜3和3.44×10〜2cm〜2 V〜-1 s〜-1。显示出已生长的MIT晶体中存在的缺陷，并且使用改良的Chen蚀刻剂溶液的平均蚀刻凹坑密度（EPD）在整个晶锭中为（2-6）×10〜4cm〜2。

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