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首页> 外文期刊>Journal of Crystal Growth >Optical and structural studies of InN/GaN dots with varying GaN cap thickness
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Optical and structural studies of InN/GaN dots with varying GaN cap thickness

机译：具有不同GaN盖厚度的InN / GaN点的光学和结构研究

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摘要

This paper reported a structural and optical study of single InN/GaN dots with varying GaN cap thickness. The surface morphology of the 10-nm thick GaN capping layer shows a truncated pyramidal shape and changed to a dome shape when the thickness of the capping layer increases to 20-nm. The increase in compressive strain of InN dots with the increase in the cap thickness was analyzed by high resolution x-ray diffraction (HRXRD). A redshift was observed in the photoluminescence (PL) peak energy of the InN dots with increasing GaN capping thickness. The redshift of the PL peak energy of the 20-nm thick GaN capping layer sample was believed to be due to the GaN capping avoids InN decomposition and decreases the surface defect density. In addition, the maximum PL intensity of the 20-nm thick GaN capping layer sample was ~2.5 times higher than that of the uncapped sample.
机译：本文报道了具有变化的GaN盖厚度的单个InN / GaN点的结构和光学研究。厚度为10 nm的GaN覆盖层的表面形态显示为截锥形，并在覆盖层的厚度增加到20 nm时变为圆顶形。通过高分辨率x射线衍射（HRXRD）分析了InN点的压缩应变随盖厚度的增加而增加。随着GaN封盖厚度的增加，在InN点的光致发光（PL）峰值能量中观察到红移。 20nm厚的GaN覆盖层样品的PL峰值能量的红移被认为是由于GaN覆盖避免了InN分解并降低了表面缺陷密度。此外，20纳米厚的GaN覆盖层样品的最大PL强度比未封端样品的最大PL强度高约2.5倍。

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