Characterization of defect patterns in Cz silicon slabs by carrier density imaging

Yu Hu; Hendrik Sch?n; Lars Arnberg

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Characterization of defect patterns in Cz silicon slabs by carrier density imaging

机译：通过载流子密度成像表征Cz硅平板中的缺陷图案

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摘要

Cu is widely used to decorate grown-in defects in Cz silicon. Instead of preferential etching, carrier density imaging is applied to characterize Cu-decorated slabs based on lifetime mapping and IR topography. The defect patterns shown by this new method are confirmed by those delineated with preferential etching, demonstrating that carrier density imaging is effective to characterize defect patterns in Cu-decorated silicon samples. Moreover, the new method is fast and etch-free, thus avoiding corrosive and toxic chemicals. The mapping results of carrier density imaging are investigated. The lifetime has a good correlation with the density of Cu precipitates, whereas the IR topography is believed to strongly depend on the stress induced by Cu precipitates.

机译：Cu被广泛用于装饰Cz硅中的生长缺陷。代替优先刻蚀，基于寿命映射和IR形貌，采用载流子密度成像来表征装饰有Cu的平板。通过优先刻蚀确定的缺陷图案可以证实这种新方法显示的缺陷图案，这表明载流子密度成像可有效表征装饰有铜的硅样品中的缺陷图案。此外，新方法快速且无蚀刻，从而避免了腐蚀性和有毒化学物质。研究了载流子密度成像的映射结果。寿命与Cu析出物的密度具有良好的相关性，而IR形貌被认为很大程度上取决于Cu析出物引起的应力。

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来源
《Journal of Crystal Growth》 |2013年第1期|6-10|共5页
作者
Yu Hu; Hendrik Sch?n; Lars Arnberg;
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作者单位

Department of Materials Science and Engineering, Norwegian University of Science and Technology, N-7491, Trondheim, Norway;

NorSun AS, Sommerrogaten 13-15, NO-0255 Oslo, Norway;

Department of Materials Science and Engineering, Norwegian University of Science and Technology, N-7491, Trondheim, Norway;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类
关键词
A1. carrier density imaging; A1. Cu decoration; A1. defect patterns; A1. ir topography; B1. Cz silicon;

机译：A1。载流子密度成像;A1。铜装饰;A1。缺陷模式;A1。 ir地形;B1。 Cz硅;

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专利

1. Investigating thermal donors in n-type Cz silicon with carrier density imaging [J] . Yu Hu, Hendrik Sch?n, Eivind Johannes ?vrelid, AIP Advances . 2012,第3期

机译：利用载流子密度成像研究n型Cz硅中的热供体
2. Carrier Density Imaging as a Tool for Characterising the Electrical Activity of Defects in Pre-Processed Multicrystalline Silicon [J] . S. Riepe, G. Stokkan, T. Kieliba, Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2004,第0期

机译：载流子密度成像作为表征预处理多晶硅中缺陷电活动的工具
3. INFLUENCE OF THE ALKALI SURFACE TREATMENTS ON THE INTERFACE-STATES DENSITY AND MINORITY CARRIER LIFETIME IN Cz-SILICON WAFER [J] . Maoudj M., Bouhafs D., Bourouba N., Surface review and letters . 2018,第7期

机译：碱表面处理对CZ-硅晶片界面界面密度和少数型载体寿命的影响
4. Carrier Density Imaging as a Tool for Characterising the Electrical Activity of Defects in Pre-Processed Multicrystalline Silicon [C] . S. Riepe, G. Stokkan, T. Kieliba, International autumn meeting on gettering and defect engineering in semiconductor technology . 2004

机译：载体密度成像作为表征预加工式多晶硅硅的电活动的工具
5. Empirical correlation of minority carrier lifetime to defect density profile in germanium on silicon heteroepitaxy. [D] . Sheng, Josephine Juin-Jye. 2013

机译：硅上异质外延的锗中少数载流子寿命与缺陷密度分布的经验相关性。
6. Characterization of defects in mono-like silicon for photovoltaic applications using X-ray Bragg diffraction imaging [O] . M. G. Tsoutsouva, V. A. Oliveira, J. Baruchel, -1

机译：使用X射线布拉格衍射成像表征光伏应用中的单晶硅中的缺陷
7. Investigating thermal donors in n-type Cz silicon with carrier density imaging [O] . Hu Yu, Schøn Hendrik, Øvrelid Eivind Johannes, 2015

机译：利用载流子密度成像研究n型Cz硅中的热供体
8. Analysis of Defect Structure in Silicon. Effect of Grain Boundary Density on Carrier Mobility in Ucp Material [R] . Dunn, J., Stringfellow, G. B., Natesh, R. 1982

机译：硅的缺陷结构分析。晶界密度对Ucp材料载流子迁移率的影响

Characterization of defect patterns in Cz silicon slabs by carrier density imaging

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