Suppression of crack generation in AlGaN/GaN distributed Bragg reflectors grown by MOVPE

T. Moudakir; S. Gautier; S. Suresh; M. Abid; Y. El Gmili; G. Patriarche; K. Pantzas; D. Troadec; J. Jacquet; F. Genty; P. Voss; A. Ougazzaden

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Suppression of crack generation in AlGaN/GaN distributed Bragg reflectors grown by MOVPE

机译：通过MOVPE抑制AlGaN / GaN分布式布拉格反射器中裂纹的产生

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AlGaN/GaN distributed Bragg reflectors have been grown on GaN templates by Metal Organic Vapor Phase Epitaxy (MOVPE). To overcome the problem of crack generation and achieve high reflectivity with an optimum number of periods a simple approach has been investigated. Using this approach, a coherently strained 20-pair Alo.27Ga_(0.73)N/GaN (42 nm/36 nm) DBR has been designed and grown. No cracks were observed over 2" wafer. Around 90% reflectivity at 384 nm and a stop-bandwidth of 18 nm was obtained by having good crystalline quality and abrupt and flat interfaces.

机译：通过金属有机气相外延（MOVPE）在GaN模板上生长了AlGaN / GaN分布的布拉格反射器。为了克服裂纹产生的问题并以最佳周期数获得高反射率，已经研究了一种简单的方法。使用这种方法，已经设计并生长了相干应变的20对Alo.27Ga_（0.73）N / GaN（42 nm / 36 nm）DBR。在2英寸晶圆上未观察到裂纹。通过具有良好的晶体质量以及陡峭而平坦的界面，可以在384 nm处获得约90％的反射率和18 nm的截止带宽。

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来源
《Journal of Crystal Growth》 |2013年第1期|12-15|共4页
作者
T. Moudakir; S. Gautier; S. Suresh; M. Abid; Y. El Gmili; G. Patriarche; K. Pantzas; D. Troadec; J. Jacquet; F. Genty; P. Voss; A. Ougazzaden;
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作者单位

UM12958 Georgia Tech/CNRS, 57070 Metz. France;

UM12958 Georgia Tech/CNRS, 57070 Metz. France,Universite de Lorraine, LMOPS, EA4423, 57070 Metz, France;

UM12958 Georgia Tech/CNRS, 57070 Metz. France;

Georgia Institute ofTechnology/GTL, UMl 2958 GT/CNRS, 57070 Metz, France;

UM12958 Georgia Tech/CNRS, 57070 Metz. France;

LPN CNRS, UPR, Route de Nozay, F-91460 Marcoussis, France;

Georgia Institute ofTechnology/GTL, UMl 2958 GT/CNRS, 57070 Metz, France;

Universite des Sciences et Technologies de Lille, IEMN, UMR 8520, 59000 Lille, France;

Universite de Lorraine, LMOPS, EA4423, 57070 Metz, France,SUPELEC, 57070 Metz, France;

Universite de Lorraine, LMOPS, EA4423, 57070 Metz, France,SUPELEC, 57070 Metz, France;

Georgia Institute ofTechnology/GTL, UMl 2958 GT/CNRS, 57070 Metz, France;

Georgia Institute ofTechnology/GTL, UMl 2958 GT/CNRS, 57070 Metz, France;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
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关键词
A3. metalorganic vapor phase epitaxy; B1. nitrides; B2. semicdhducting gallium compounds;

机译：A3。金属有机气相外延;B1。氮化物B2。半导电镓化合物;

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1. Crack-free ultraviolet AlGaN/GaN distributed Bragg reflectors grown by MOVPE on 6H-SiC(0001) [J] . Dongsheng Wang, Hongwei Liang, Pengcheng Tao, Superlattices and microstructures . 2014,第juna期

机译：MOVPE在6H-SiC上生长的无裂纹紫外AlGaN / GaN分布式布拉格反射器（0001）
2. Suppression of cracks and V-shaped defects, and improvement of reflectivity of GaN/AlGaN distributed Bragg reflectors by insertion of multiple interlayers [J] . H. S. Cheong, T. V. Cuong, H. G. Kim, Physica Status Solidi. C, Conferences and critical reviews . 2004,第10期

机译：通过插入多个中间层，抑制裂纹和V形缺陷，并提高GaN / AlGaN分布的布拉格反射器的反射率
3. Suppression of cracks and Ⅴ-shaped defects, and improvement of reflectivity of GaN/AlGaN distributed Bragg reflectors by insertion of multiple interlayers [J] . H. S. Cheong, T. V. Cuong, H. G. Kim, Physica Status Solidi. A, Applications and Materials Science . 2004,第12期

机译：通过插入多个中间层来抑制裂纹和Ⅴ型缺陷，并提高GaN / AlGaN分布的布拉格反射器的反射率
4. Suppression of cracks and V-shaped defects, and improvement of reflectivity of GaN/AlGaN distributed Bragg reflectors by insertion of multiple interlayers [C] . H. S. Cheong, T. V. Cuong, H. G. Kim, International Symposium on Blue Laser and Light Emitting Diodes . 2004

机译：抑制裂缝和V形缺陷，通过插入多个中间层来改善GaN / AlGaN分布式布拉格反射器的反射率
5. Nonpolar GaN-Based VCSELs with Lattice-Matched Nanoporous Distributed Bragg Reflector Mirrors [D] . Mishkat-Ul-Masabih, Saadat M. 2019

机译：基于非极性GaN的VCSEL与晶格匹配的纳米多孔分布式布拉格反射镜
6. Performance-Enhanced 365 nm UV LEDs with Electrochemically Etched Nanoporous AlGaN Distributed Bragg Reflectors [O] . Xingdong Lu, Jing Li, Kang Su, 2019

机译：具有电化学蚀刻的纳米多孔AlGaN分布式布拉格反射器的性能增强型365 nm UV LED
7. Strain management of AlGaN-based distributed Bragg reflectors with GaN interlayer grown by metalorganic chemical vapor deposition [O] . 2016

机译：采用金属有机化学气相沉积法生长GaN中间层的alGaN基分布布拉格反射镜的应变管理

Suppression of crack generation in AlGaN/GaN distributed Bragg reflectors grown by MOVPE

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