Fabrication of GaN structures with embedded network of voids using pillar patterned GaN templates

著录项

• 来源
  《Journal of Crystal Growth》 |2013年第1期|42-45|共4页
• 作者

  O. Svensk; M. AH; L Riuttanen; P.T. Toermae; S. Sintonen; S. Suihkonen; M. Sopanen; H. Lipsanen;

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• 作者单位

  Aalto University, School of Electrical Engineering, Department of Micro and Nanosciences, Tietotie 3, 02150 Espoo, Finland;

  Aalto University, School of Electrical Engineering, Department of Micro and Nanosciences, Tietotie 3, 02150 Espoo, Finland;

  Aalto University, School of Electrical Engineering, Department of Micro and Nanosciences, Tietotie 3, 02150 Espoo, Finland;

  Aalto University, School of Electrical Engineering, Department of Micro and Nanosciences, Tietotie 3, 02150 Espoo, Finland;

  Aalto University, School of Electrical Engineering, Department of Micro and Nanosciences, Tietotie 3, 02150 Espoo, Finland;

  Aalto University, School of Electrical Engineering, Department of Micro and Nanosciences, Tietotie 3, 02150 Espoo, Finland;

  Aalto University, School of Electrical Engineering, Department of Micro and Nanosciences, Tietotie 3, 02150 Espoo, Finland;

  Aalto University, School of Electrical Engineering, Department of Micro and Nanosciences, Tietotie 3, 02150 Espoo, Finland;

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• 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  A1. defects; A1. etching; A3. MOCVD; A3. selective epitaxy; B1. nitrides;

  机译：A1。缺陷A1。蚀刻A3。 MOCVD;A3。选择性外延B1。氮化物;