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首页> 外文期刊>Journal of Crystal Growth >InGaN-based solar cells with a tapered GaN structure
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InGaN-based solar cells with a tapered GaN structure

机译：具有锥形GaN结构的InGaN基太阳能电池

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摘要

InGaN solar cell structures had a tapered GaN structure at GaN/sapphire interface that was fabricated through a laser decomposition process and a wet crystallographic etching process. A 51% backside roughened-area ratio was observed in the treated solar cell structure to increase the light scattering process at GaN/sapphire interface. The peak external quantum efficiency (EQE) and peak wavelengths of the photovoltaic properties were measured at 38.3% (at 392 nm) and 70.5% (at 396 nm) for the conventional and the treated solar cell structures, respectively. The cutoff wavelength of the relative transmittance spectra and the wavelength of the peak EQE values for the treated solar cell structure had the redshift phenomenon which was caused by increasing light reflectance at the tapered-GaN/ sapphire interface and increasing light absorption at the InGaN layers.
机译：InGaN太阳能电池结构在GaN /蓝宝石界面处具有渐缩的GaN结构，其通过激光分解工艺和湿法晶体蚀刻工艺制造。在经处理​​的太阳能电池结构中观察到51％的背面粗糙面积比，以增加GaN /蓝宝石界面处的光散射过程。对于常规太阳能电池结构和处理过的太阳能电池结构，测量的峰值外部量子效率（EQE）和光伏特性的峰值波长分别为38.3％（在392 nm）和70.5％（在396 nm）。处理过的太阳能电池结构的相对透射光谱的截止波长和峰值EQE值的波长具有红移现象，这是由于锥形GaN /蓝宝石界面处的光反射率增加和InGaN层的光吸收率增加而引起的。

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  • 来源
    《Journal of Crystal Growth》 |2013年第1期|97-100|共4页
  • 作者

    Chia-Feng Lin; Kuei-Ting Chen; Sih-Han Chen; Chung-Chieh Yang; Wan-Chun Huang; Tsung-Han Hsieh;

  • 作者单位

    Department of Materials Science and Engineering National Chung Hsing Universityjaichung 402, Taiwan;

    Department of Materials Science and Engineering National Chung Hsing Universityjaichung 402, Taiwan;

    Department of Materials Science and Engineering National Chung Hsing Universityjaichung 402, Taiwan;

    Department of Materials Science and Engineering National Chung Hsing Universityjaichung 402, Taiwan;

    Department of Materials Science and Engineering National Chung Hsing Universityjaichung 402, Taiwan;

    Department of Materials Science and Engineering National Chung Hsing Universityjaichung 402, Taiwan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1. etching; B2. semiconductingⅢ—Ⅴ materials; B3. solar cells;

    机译：A1。蚀刻B2。半导体Ⅲ—Ⅴ材料;B3。太阳能电池;

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