...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Crystal Growth >Optimization of p-doping in AlGaAs grown by CBE using TMA for AlGaAs/GaAs tunnel junctions
【24h】

Optimization of p-doping in AlGaAs grown by CBE using TMA for AlGaAs/GaAs tunnel junctions

机译：使用TMA对AlGaAs / GaAs隧道结进行CBE生长的AlGaAs中p掺杂的优化

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Trimethyl aluminium (TMA) was used as an intrinsic dopant source to grow highly p-doped AlGaAs by chemical beam epitaxy (CBE). Growth parameters were varied to control doping level, and three sets of growth parameters were identified to maximize the hole concentration in CBE-grown AlGaAs: low temperature growth; low V/III ratio combined with high growth rate; aluminium-rich composition. AlGaAs/GaAs tunnel junctions were fabricated using each of these set of growth parameters and tunneling peak currents as high as 6136 A/cm2 were obtained. These tunnel junctions are suitable for use in very high concentration multijunction solar cells.
机译：三甲基铝（TMA）用作本征掺杂源，可通过化学束外延（CBE）生长高度p掺杂的AlGaAs。改变生长参数以控制掺杂水平，并确定了三组生长参数以最大化CBE生长的AlGaAs中的空穴浓度。低的V / III比值加上高的增长率；富铝成分。使用这些生长参数组中的每一个，制造AlGaAs / GaAs隧道结，并获得高达6136 A / cm2的隧道峰值电流。这些隧道结适用于非常高浓度的多结太阳能电池。

著录项

  • 来源
    《Journal of Crystal Growth》 |2013年第1期|1-4|共4页
  • 作者

    Bernard Paquette; Marie DeVita; Artur Turala; Gitanjali Kolhatkar; Abderraouf Boucherif; Abdelatif Jaouad; Vincent Aimez; Richard Ares;

  • 作者单位

    Interdisciplinary Institute for Technological Innovation (31T), Universite de Sherbrooke, Sherbrooke, Quebec, Canada JIK 2RI;

    Interdisciplinary Institute for Technological Innovation (31T), Universite de Sherbrooke, Sherbrooke, Quebec, Canada JIK 2RI;

    Interdisciplinary Institute for Technological Innovation (31T), Universite de Sherbrooke, Sherbrooke, Quebec, Canada JIK 2RI;

    Interdisciplinary Institute for Technological Innovation (31T), Universite de Sherbrooke, Sherbrooke, Quebec, Canada JIK 2RI;

    Interdisciplinary Institute for Technological Innovation (31T), Universite de Sherbrooke, Sherbrooke, Quebec, Canada JIK 2RI;

    Interdisciplinary Institute for Technological Innovation (31T), Universite de Sherbrooke, Sherbrooke, Quebec, Canada JIK 2RI;

    Interdisciplinary Institute for Technological Innovation (31T), Universite de Sherbrooke, Sherbrooke, Quebec, Canada JIK 2RI;

    Interdisciplinary Institute for Technological Innovation (31T), Universite de Sherbrooke, Sherbrooke, Quebec, Canada JIK 2RI;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    al. carbon incorporation; a3. chemical beam epitaxy; bl. algaas; b3. solar cells; b3. tunnel junction;

    机译：等碳掺入;a3。化学束外延;bl。藻类;b3。太阳能电池;b3。隧道结;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号