Investigation of dislocation structures in ribbon- and ingot-grown multicrystalline silicon

著录项

• 来源
  《Journal of Crystal Growth》 |2013年第1期|41-46|共6页
• 作者

  E. Schmid; C. Funke; T. Behm; O. Patzold; H. Berek; M. Stelter;

  展开▼
• 作者单位

  Institute of Nonferrous Metallurgy and Purest Materials, TU Bergakademie Freiberg, Leipziger Str. 34, 09599 Freiberg, Germany;

  Institute of Experimental Physics, TU Bergakademie Freiberg, Leipziger Str. 23, 09599 Freiberg, Germany;

  Institute of Experimental Physics, TU Bergakademie Freiberg, Leipziger Str. 23, 09599 Freiberg, Germany;

  Institute of Nonferrous Metallurgy and Purest Materials, TU Bergakademie Freiberg, Leipziger Str. 34, 09599 Freiberg, Germany;

  Institute of Ceramic, Glass and Construction Materials, TU Bergakademie Freiberg, Agricolastr. 17, 09599 Freiberg, Germany;

  Institute of Nonferrous Metallurgy and Purest Materials, TU Bergakademie Freiberg, Leipziger Str. 34, 09599 Freiberg, Germany;

  展开▼
• 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  Crystal structure; Defects; Growth from melt; Bridgman technique; Edge defined film fed growth; Semiconducting silicon;

  机译：晶体结构缺陷;从熔体中生长;布里奇曼技术;边缘确定的薄膜进食生长;半导体硅;