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首页> 外文期刊>Journal of Crystal Growth >Single-crystalline hafnium carbide nanowire growth below the eutectic temperature by CVD
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Single-crystalline hafnium carbide nanowire growth below the eutectic temperature by CVD

机译：在低共晶温度下通过CVD生长单晶碳化ha纳米线

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摘要

Single-crystalline hafnium carbide (HfC) nanowires were synthesized by a Ni-catalyst-assisted chemical vapor deposition (CVD) method at 1025 ℃ below the eutectic temperature (TE). The synthesized products were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray (EDX), and transmission electron microscopy (TEM). XRD and EDX results indicate that well stoichiometric HfC nanowires were obtained. SEM and TEM investigations show the HfC nanowires possess typical diameters of ～50 nm and lengths of tens of microns. Most of the nanowires are grown along <112> crystal directions and the cluster/column interfaces at the wire tips parallel to the {011} crystal planes. Although the synthesis temperature of the nanowires is at least 75 ℃ lower than TE, the vapor -liquid -solid growth of the HfC nanowires still occurs probably due to nanoscale size effects and curvature effects. In addition, it is found that the diameters of the synthesized products increase when raising the synthesis temperature.
机译：在低共熔温度（TE）以下1025℃下，通过镍催化剂辅助化学气相沉积（CVD）方法合成了单晶碳化ha（HfC）纳米线。通过X射线衍射（XRD），扫描电子显微镜（SEM），能量分散X射线（EDX）和透射电子显微镜（TEM）对合成产物进行表征。 XRD和EDX结果表明获得了化学计量良好的HfC纳米线。 SEM和TEM研究表明，HfC纳米线的典型直径约为50 nm，长度为数十微米。大多数纳米线沿<112>晶体方向生长，并且线尖端处的簇/列界面平行于{011}晶面。尽管纳米线的合成温度比TE至少低75℃，但是HfC纳米线的气-液-固生长仍然可能发生，这是由于纳米级的尺寸效应和曲率效应。另外，发现当升高合成温度时，合成产物的直径增加。

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  • 来源
    《Journal of Crystal Growth》 |2013年第1期|44-49|共6页
  • 作者

    Song Tian; Hejun Li; Yulei Zhang; Shouyang Zhang; Yongjie Wang; Jincui Ren; Xinfa Qiang;

  • 作者单位

    State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an 710072, China;

    State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an 710072, China;

    State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an 710072, China;

    State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an 710072, China;

    State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an 710072, China;

    State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an 710072, China;

    State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an 710072, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1. TEM; A3. Chemical vapor deposition; B1. Eutectic temperature; B1. Nanowires; B1. HfC;

    机译：A1。 TEM;A3。化学气相沉积;B1。共晶温度;B1。纳米线;B1。氢氟碳;

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