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首页> 外文期刊>Journal of Crystal Growth >Amorphous contact layers on (Cd,Mn)Te crystals
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Amorphous contact layers on (Cd,Mn)Te crystals

机译：（Cd，Mn）Te晶体上的非晶接触层

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摘要

The communication describes our research on a technique of making electrical contacts to semi-insulating (Cd,Mn)Te crystals for radiation detector applications. Since the electrical contacts made by deposition of Au directly onto the (Cd,Mn)Te surface turned out to be unreproducible, and the contacts made by deposition of monocrystalline layers of heavily doped semiconductors were unpractical for applications, our investigations were focused on the amorphous contact layers. The amorphous layers of heavily doped ZnTe:Sb or CdTe:In were evaporated on the "epi-ready" surfaces of good-quality, high-resistivity (10~--l0~(10)Ω cm) single crystals of (Cd,Mn)Te. The evaporation was carried out in the medium-high vacuum of about 10~(-7) Torr. For electrical connections the amorphous contact layers were covered by an evaporated Au top layer. We investigated, the effect of thickness of the amorphous layer on the functioning of the contact. At the moment 1 urn thickness seems to be satisfactory.
机译：通讯描述了我们对与半绝缘（Cd，Mn）Te晶体进行电接触以用于辐射探测器应用的技术的研究。由于将Au直接沉积在（Cd，Mn）Te表面上所形成的电接触被证明是不可复制的，并且通过重掺杂半导体的单晶层沉积所进行的接触在实际应用中不可行，因此我们的研究集中在非晶接触层。重掺杂的ZnTe：Sb或CdTe：In的非晶层在（Cd，Cd， Mn）Te。蒸发是在约10〜（-7）Torr的中高真空下进行的。对于电连接，非晶质接触层被蒸发的金顶层覆盖。我们研究了非晶层厚度对接触功能的影响。目前1 1的厚度似乎是令人满意的。

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  • 来源
    《Journal of Crystal Growth》 |2012年第2012speca期|1-5|共5页
  • 作者

    M. Witkowska-Baran; A. Mycielski; D. Kochanowska; B. Witkowska; W. Kaliszek; R. Jakiela; E. tusakowska; V. Domukhovski; M. Wejgrzycki;

  • 作者单位

    Institute of Physics, Polish Academy of Sciences, Warsaw, Poland;

    Institute of Physics, Polish Academy of Sciences, Warsaw, Poland;

    Institute of Physics, Polish Academy of Sciences, Warsaw, Poland;

    Institute of Physics, Polish Academy of Sciences, Warsaw, Poland;

    Institute of Physics, Polish Academy of Sciences, Warsaw, Poland;

    Institute of Physics, Polish Academy of Sciences, Warsaw, Poland;

    Institute of Physics, Polish Academy of Sciences, Warsaw, Poland;

    Institute of Physics, Polish Academy of Sciences, Warsaw, Poland;

    Institute of Electron Technology, Warsaw, Poland;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Al. Surface processes; B2. Ⅱ-Ⅵ semiconductors; B3. Detectors;

    机译：铝表面工艺;B2。 Ⅱ-Ⅵ半导体;B3。探测器;

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