Bi incorporation in GaAs(100)-2 × 1 and 4 × 3 reconstructions investigated by RHEED and STM

著录项

• 来源
  《Journal of Crystal Growth》 |2012年第1期|p.19-23|共5页
• 作者

  F. Bastiman; A.G. Cullis; J.P.R. David; S.J. Sweeney;

  展开▼
• 作者单位

  University of Sheffield, Department of Electronic and Electrical Engineering, Mappin Street, Sheffield SI 3JD, United Kingdom;

  University of Sheffield, Department of Electronic and Electrical Engineering, Mappin Street, Sheffield SI 3JD, United Kingdom;

  University of Sheffield, Department of Electronic and Electrical Engineering, Mappin Street, Sheffield SI 3JD, United Kingdom;

  Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, Surrey CU2 7XH, United Kingdom;

  展开▼
• 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  A1. Crystal Morphology; A1. Scanning tunnelling microscopy; A3. Molecular beam epitaxy; B1. Bismuth compounds;

  机译：A1。晶体形态A1。扫描隧道显微镜A3。分子束外延;B1。铋化合物;