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首页> 外文期刊>Journal of Crystal Growth >Growth of multicrystalline Si ingots using noncontact crucible method for reduction of stress
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Growth of multicrystalline Si ingots using noncontact crucible method for reduction of stress

机译：利用非接触坩埚法生长多晶硅锭以降低应力

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摘要

Stress control is necessary when preparing high-quality multicrystalline Si ingots using crucibles because crystal defects such as dislocations are mainly generated by stress in the ingots. Conventional crystal growth methods using crucibles cannot control the stress caused by expansion due to the solidification of the Si melt. We proposed a noncontact crucible method using conventional crucibles that reduces the stress in Si multicrystalline ingots. In this method, nucleation occurs on the surface of a Si melt using seed crystals, and crystals grow inside the Si melt without touching the crucible walls. Then, the ingots continue to grow while being slowly pulled upward to ensure that the crystal growth remains in the low-temperature region. The diameter and solidification ratio of the ingots can be controlled by reducing the melt temperature in the low-temperature region and by varying the product of the temperature reduction from the melting point of Si and the total growth time, respectively. A Si ingot with a diameter of 21 cm and a solidification ratio of 83% was obtained in a crucible with a diameter of 30 cm. We have confirmed that ingot growth in a crucible is feasible, during which the ingot does not come in contact with the crucible walls.
机译：当使用坩埚制备高质量的多晶硅锭时，应力控制是必要的，因为诸如位错的晶体缺陷主要是由锭中的应力产生的。使用坩埚的常规晶体生长方法不能控制由于硅熔体的凝固而引起的由膨胀引起的应力。我们提出了一种使用常规坩埚的非接触式坩埚方法，该方法可降低Si多晶锭中的应力。在该方法中，使用种晶在Si熔体的表面上发生成核，并且晶体在Si熔体内部生长而不接触坩埚壁。然后，晶锭继续生长，同时缓慢向上拉动，以确保晶体生长保持在低温区域。可以通过降低低温区域中的熔融温度并通过改变从Si的熔点降低的温度乘积和总的生长时间来控制铸锭的直径和凝固率。在直径为30cm的坩埚中获得了直径为21cm且凝固率为83％的Si锭。我们已经证实，在坩埚中生长锭是可行的，在此期间锭不与坩埚壁接触。

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