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首页> 外文期刊>Journal of Crystal Growth >Structural and electrical characteristics of InGaAsN layers grown by LPE
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Structural and electrical characteristics of InGaAsN layers grown by LPE

机译：LPE生长的InGaAsN层的结构和电学特性

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摘要

Crystallographic and transport properties of nominally undoped and Sn-doped InGaAsN layers grown by low-temperature LPE have been studied and related to the growth conditions. In the case of lattice matching, flat and uniform mirror-like layers of 8-10 μm in thickness are obtained. The compositions of the layers under study have been determined by combination of X-ray microanalysis and X-ray diffraction methods to be In_(0.035)Ga_(0.065)As_(0.086)N_(0.014).The lattice mismatch between layer and substrate △a_1/a_s calculated from X-ray diffraction curves is less than-7 × 10~(-4) for all samples. The layers grown at lower epitaxy temperatures exhibit the highest crystalline quality, better lattice match and better homogeneity. This is in good agreement with the results of morphological study by atomic force microscopy which show root mean-square surface roughness of 0.18 nm for the best layers. CV and Hall measurements reveal that intentionally undoped InGaAsN layers are n-type with free carrier concentration about one order of magnitude higher in comparison to layers not containing nitrogen and high electron mobility values over 2000 cm~2/Vs. A dramatic reduction in the free carrier concentration and slightly increase in mobility are observed for Sn-doped InGaAsN layers.
机译：研究了由低温LPE生长的名义上无掺杂和Sn掺杂的InGaAsN层的晶体学和输运性质，并与生长条件有关。在晶格匹配的情况下，获得厚度为8-10μm的平坦且均匀的镜状层。结合X射线显微分析和X射线衍射方法确定了所研究层的组成为In_（0.035）Ga_（0.065）As_（0.086）N_（0.014）。层与衬底之间的晶格失配△对于所有样品，由X射线衍射曲线计算出的a_1 / a_s小于-7×10〜（-4）。在较低外延温度下生长的层表现出最高的晶体质量，更好的晶格匹配和更好的均匀性。这与通过原子力显微镜进行的形态学研究结果非常吻合，后者显示最佳层的均方根表面粗糙度为0.18 nm。 CV和霍尔测量表明，有意未掺杂的InGaAsN层是n型，自由载流子浓度比不包含氮且在2000 cm〜2 / Vs内具有高电子迁移率的层高约一个数量级。对于掺Sn的InGaAsN层，观察到自由载流子浓度的显着降低和迁移率的略微提高。

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  • 来源
    《Journal of Crystal Growth》 |2012年第1期|p.79-82|共4页
  • 作者

    M. Milanova; P. Vitanov; P. Terziyska; G. Popov; G. Koleva;

  • 作者单位

    Central Laboratory of Applied Physics, 59 St. Petersburg Blvd, 4000 Plovdiv, Bulgaria;

    Central Laboratory of Solar Energy and New Energy Sources, 72 Tzarigradsko Chaussee Blvd, 1784 Sofia, Bulgaria;

    Semiconductor Research Laboratory, Department of Electrical Engineering, Lakehead University, 955 Oliver Rd, Thunder Bay, ON, Canada P7B 5Z5;

    Central Laboratory of Applied Physics, 59 St. Petersburg Blvd, 4000 Plovdiv, Bulgaria;

    Central Laboratory of Applied Physics, 59 St. Petersburg Blvd, 4000 Plovdiv, Bulgaria;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A3. Liquid phase epitaxy; B1. Alloys; B2. Dilute nitrides; B2. Semiconducting Ⅲ-Ⅴ materials;

    机译：A3。液相外延;B1。合金;B2。稀氮化物;B2。半导体Ⅲ-Ⅴ材料;

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