A1N homoepitaxial growth on sublimation-AIN substrate by low-pressure HVPE

Takuya Nomura; Kenta Okumura; Hideto Miyake; Kazumasa Hiramatsu; Osamu Eryu; Yoichi Yamada

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A1N homoepitaxial growth on sublimation-AIN substrate by low-pressure HVPE

机译：低压HVPE在升华-AIN衬底上AlN同质外延生长

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Crack-free thick A1N layers with low impurity concentrations were grown on free-standing A1N substrates fabricated by a sublimation method. Cracks due to tensile stresses were generated in the overgrowth layer when using on-axis A1N (0 0 01) substrates, as indicated by Raman scattering spectroscopy. In contrast, cracks were not generated when using 5° off-angle A1N (0 001) substrates. High crystalline quality was indicated by X-ray rocking curve (XRC) analysis. The full width at half maximum (FWHM) values of the (0 0 0 2) and (10-10) diffractions were 277 and 306arcsec, respectively. Secondary ion mass spectrometry (SIMS) measurements indicated that the Si and C impurity concentrations were reduced to half of those in the sublimation-grown A1N substrates.

机译：在通过升华方法制造的独立式AlN衬底上生长具有低杂质浓度的无裂纹的厚AlN厚层。当使用轴向A1N（0 0 01）衬底时，过度拉伸层中会由于拉伸应力而产生裂纹，如拉曼散射光谱法所示。相反，当使用5°斜角AlN（0 001）基板时，不会产生裂纹。 X射线摇摆曲线（XRC）分析表明结晶质量高。（0 0 0 2）和（10-10）衍射的半峰全宽（FWHM）值分别为277和306arcsec。二次离子质谱（SIMS）测量表明，Si和C杂质浓度降低到升华生长的AlN衬底中的一半。

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来源
《Journal of Crystal Growth》 |2012年第1期|p.69-71|共3页
作者
Takuya Nomura; Kenta Okumura; Hideto Miyake; Kazumasa Hiramatsu; Osamu Eryu; Yoichi Yamada;
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作者单位

Mie University, 1577 Kurima-machiya, Tsu, Mie 514-8507, Japan;

Mie University, 1577 Kurima-machiya, Tsu, Mie 514-8507, Japan;

Mie University, 1577 Kurima-machiya, Tsu, Mie 514-8507, Japan;

Mie University, 1577 Kurima-machiya, Tsu, Mie 514-8507, Japan;

Nagoya Institute of Technology, Cokiso, Showa-ku, Nagoya, Aichi 466-8555, japan;

Yamaguchi University, 1677-1 Yoshida, Yamaguchi-shi, Yamaguchi 753-8511, Japan;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类
关键词
A2. homoepitaxial growth; A 3. hvpe; B1.ain;

机译：A2。同质外延生长A 3. hvpe;B1ain;

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1. Low-pressure HVPE growth of crack-free thick A1N on a trench-patterned A1N template [J] . Yusuke Katagir, Shinya Kishino, Kazuki Okuura, Journal of Crystal Growth . 2009,第10期

机译：沟槽图案化A1N模板在低压HVPE上生长无裂纹的厚A1N
2. High quality 6H-SiC (0001) homoepitaxial layers as substrate surface for growth of A1N epitaxial layers [J] . C. Hallin, A. Kakanakova-Georgieva, P. Persson, Physica Status Solidi. C, Conferences and critical reviews . 2005,第7期

机译：高质量6H-SiC（0001）同质外延层作为AlN外延层生长的衬底表面
3. Homoepitaxial HVPE-GaN growth on non-polar and semi-polar seeds [J] . M. Amilusik, T. Sochacki, B. Lucznik, Journal of Crystal Growth . 2014,第octa1期

机译：同质外延HVPE-GaN在非极性和半极性种子上的生长
4. Growth of boron nitride on (0001) A1N templates by High Temperature- Hydride Vapor Phase Epitaxy (HT-HVPE). [C] . Nicolas Coudurier, Raphael Boichot, Frederic Mercier, European Conference on Chemical Vapour Deposition . 2013

机译：高温 - 氢化气相外延（HT-HVPE）的（HT-HVPE）在（0001）A1N模板上的氮化硼生长。
5. Studies of growth mechanism and defect origins in 4H-silicon carbide substrates and homoepitaxial layers. [D] . Wang, Huanhuan. 2014

机译：研究4H-碳化硅衬底和同质外延层的生长机理和缺陷来源。
6. Area Selective Growth of Titanium Diselenide ThinFilms into Micropatterned Substrates by Low-Pressure Chemical VaporDeposition [O] . Sophie L. Benjamin, C. H. (Kees) deGroot, Chitra Gurnani, -1

机译：二硒化钛薄膜的区域选择性生长低压化学气相沉积成微图案化基材的薄膜沉积
7. Homoepitaxial Growth and Characterization of 4H-SiC Epilayers by Low-Pressure Hot-Wall Chemical Vapor Deposition [O] . Guosheng Sun, Jin Ning, Quancheng Gong, 2016

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A1N homoepitaxial growth on sublimation-AIN substrate by low-pressure HVPE

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