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首页> 外文期刊>Journal of Crystal Growth >Dislocation bending and tensile stress generation in GaN and AlGaN films
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Dislocation bending and tensile stress generation in GaN and AlGaN films

机译：GaN和AlGaN薄膜中位错弯曲和张应力的产生

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摘要

The growth of GaN and AlGaN films is accompanied by dislocation bending, interaction, density reduction and tensile stress generation to varying degrees. A kinetic model involving outdiffusion of atoms at the growth surface has been adapted to rationalize all of these phenomena using a single platform. Active contribution of dislocation interaction, apart from stress and a surface chemical potential, to the driving force for outdiffusion of atoms from the growth surface has been considered. The kinetic model has then been used to explain stress evolution during growth of GaN films on Si using an A1N buffer layer, an example of a most general case. Stress-thickness relations obtained from the model have been fitted to experimental data to derive basic outdiffusion parameters. These parameters have been used to analyze experimental observations of dislocation structure evolution. The model is able to account for the varying degrees of dislocation bending and interaction observed in these films.
机译：GaN和AlGaN膜的生长伴随着不同程度的位错弯曲，相互作用，密度降低和拉伸应力产生。已经修改了涉及在生长表面原子向外扩散的动力学模型，以使用单个平台合理化所有这些现象。除应力和表面化学势之外，已经考虑了位错相互作用对原子从生长表面向外扩散的驱动力的积极贡献。然后，使用动力学模型来解释使用AlN缓冲层在Si上生长GaN膜时的应力演变，这是最常见情况的一个例子。从模型获得的应力-厚度关系已拟合到实验数据中，以得出基本的外扩散参数。这些参数已用于分析位错结构演变的实验观察。该模型能够解释这些薄膜中观察到的位错弯曲和相互作用的变化程度。

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  • 来源
    《Journal of Crystal Growth》 |2012年第2012期|p.35-42|共8页
  • 作者

    Srinivasan Raghavan; Ian C. Manning; Xiaojun Weng; Joan M. Redwing;

  • 作者单位

    Materials Research Centre, Indian Institute of Science, Bangalore 560012, India;

    Materials Research Institute and Department of Materials Science and Engineering, The Pennsylvania State University, University Park. PA 16802, USA;

    Materials Research Institute and Department of Materials Science and Engineering, The Pennsylvania State University, University Park. PA 16802, USA;

    Materials Research Institute and Department of Materials Science and Engineering, The Pennsylvania State University, University Park. PA 16802, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1. Dislocation bending; A1. Kinetics; A1. Stresses; B1. AlGaN; B1. GaN;

    机译：A1。位错弯曲;A1。动力学;A1。压力;B1。氮化铝镓;B1。氮化镓;

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