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首页> 外文期刊>Journal of Crystal Growth >Oriented single crystals of Ni-Mn-Ga with very low switching field
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Oriented single crystals of Ni-Mn-Ga with very low switching field

机译：Ni-Mn-Ga取向单晶，开关场极低

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摘要

Ni-Mn-Ga single crystals were grown from an oriented seed using a modified Bridgman method. The grown crystals can be oriented very easily for final preparation of magnetic shape memory (MSM) elements with all faces parallel to {100}. The twinning stress depends on the orientation of the twin habit plane. For type I twin boundaries with traces perpendicular to the sample edge, the equivalent stress to move the twin boundary was 0.9 MPa. For type 11 twin boundaries with traces slightly inclined to those of type I twin boundaries, the equivalent stress to move the twin boundary was 0.01 MPa. The presented method of growing and processing Ni-Mn-Ga single crystals is more efficient than existing methods and produces high-quality MSM elements.
机译：使用改良的Bridgman方法从定向晶种中生长出Ni-Mn-Ga单晶。生长的晶体可以很容易地取向，以最终制备磁性面记忆（MSM）元件，所有面都平行于{100}。孪生应力取决于孪生习性平面的方向。对于具有垂直于样品边缘的痕迹的I型孪晶边界，移动孪晶边界的等效应力为0.9 MPa。对于11型双晶边界，其迹线稍微倾斜于I型双晶边界，使双晶边界移动的等效应力为0.01 MPa。提出的生长和处理Ni-Mn-Ga单晶的方法比现有方法更有效，并且可以生产高质量的MSM元素。

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  • 来源
    《Journal of Crystal Growth》 |2012年第2012期|p.64-68|共5页
  • 作者

    D. Kellis; A. Smith; K. Ullakko; P. Muellner;

  • 作者单位

    Department of Materials Science and Engineering, Boise State University, Boise, ID 83725, USA;

    Department of Materials Science and Engineering, Boise State University, Boise, ID 83725, USA;

    Department of Materials Science and Engineering, Boise State University, Boise, ID 83725, USA,Lappeenranta University of Technology, LUT-Savo, Savonlinna, Finland;

    Department of Materials Science and Engineering, Boise State University, Boise, ID 83725, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A2. Bridgman technique; A2. Seed crystals; A2. Single crystal growth; B1. Metals; B2. Magnetic material;

    机译：A2。布里奇曼技术;A2。种晶;A2。单晶生长;B1。金属;B2。磁性材料;

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