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首页> 外文期刊>Journal of Crystal Growth >Floating-zone growth and characterization of single crystals of manganese orthosilicate, Mn_2SiO_4
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Floating-zone growth and characterization of single crystals of manganese orthosilicate, Mn_2SiO_4

机译：原硅酸锰Mn_2SiO_4的浮区生长及单晶表征

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Using a floating zone technique and a passive afterheater, crack-free single crystals of manganese orthosilicate, Mn_2SiO_4, were grown along the three principle orientations in a reducing gas atmosphere at atmospheric pressure. The grown crystals were typically 5-7 mm in diameter and 20-40 mm in length. Well-developed facets were found on the periphery of some of the crystals grown along the [100] orientation (space group: Pbnm). Laue back reflection was used to determine orientations of grown crystals and of facets formed at outer surfaces. Dislocation densities ranging between 105 and 10~6 cm~(-2) were determined by optical microscopy after polishing and chemical etching. By using X-ray powder diffraction it was determined that a thermodynamically favored decomposition of grown single crystals of manganese silicate during cooling after crystal growth did not occur. Concentrations of impurities and the degree of a desired silica excess present in the grown crystals were determined by using the ICP-AES technique. The presence of intended silica-rich precipitates was confirmed by electron microprobe analysis.
机译：使用浮区技术和被动后热器，在还原性大气压下，在大气压下，沿三个主要方向生长了无裂纹的原硅酸锰锰单晶Mn_2SiO_4。生长的晶体通常直径为5-7mm，长度为20-40mm。在沿[100]方向生长的某些晶体的外围发现了发达的小平面（空间群：Pbnm）。劳厄背反射用于确定生长的晶体和在外表面形成的小面的方向。抛光和化学蚀刻后，通过光学显微镜确定位错密度在105和10〜6 cm〜（-2）之间。通过使用X射线粉末衍射，可以确定在晶体生长后的冷却过程中，没有发生热力学上有利于生长的硅酸锰单晶的分解。通过使用ICP-AES技术确定生长的晶体中存在的杂质浓度和所需二氧化硅过量的程度。通过电子探针分析确认了预期的富含二氧化硅的沉淀物的存在。

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