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首页> 外文期刊>Journal of Crystal Growth >Comparative study on Cu_2ZnSnS_4 thin films deposited by sputtering and pulsed laser deposition from a single quaternary sulfide target
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Comparative study on Cu_2ZnSnS_4 thin films deposited by sputtering and pulsed laser deposition from a single quaternary sulfide target

机译:溅射和脉冲激光沉积单一季铵靶Cu_2ZnSnS_4薄膜的比较研究。

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摘要

Cu_2ZnSnS_4 (CZTS) thin films were directly grown on the heating Mo-coated glass substrate by Sputtering and Pulsed Laser Deposition (PLD) with a single quaternary sulfide target. XRD and Raman scattering confirm that both CZTS films are of kesterite structure, although the composition of CZTS film deposited by Sputtering deviates from the stoichiometry of CZTS more significantly than that deposited by PLD. However, CZTS deposited by sputtering has poor crystallintiy and small grain-sizes in contrast with the sample deposited by PLD, due to severe compositional deviation. Reflection spectroscopy and spectroscopic ellipsometry demonstrate that these CZTS films have the ideal band gap (E_g≈1.5 eV) and high absorption coefficient as the absorber layer of thin-film solar cells. This implies that the optical properties of CZTS film are tolerant to its compositional deviation.
机译:Cu_2ZnSnS_4(CZTS)薄膜通过溅射和脉冲激光沉积(PLD)和单个季铵盐靶直接在加热的Mo涂层玻璃基板上生长。 XRD和拉曼散射证实了两种CZTS膜均具有镁橄榄石结构,尽管通过溅射沉积的CZTS膜的组成与通过PLD沉积的化学计量相比明显偏离CZTS的化学计量。然而,与通过PLD沉积的样品相比,通过溅射沉积的CZTS具有差的结晶度和小的晶粒尺寸,这归因于严重的组成偏差。反射光谱和椭圆偏振光谱表明,这些CZTS薄膜具有理想的带隙(E_g≈1.5eV)和高吸收系数,是薄膜太阳能电池的吸收层。这意味着CZTS薄膜的光学性能可耐受其成分偏差。

著录项

  • 来源
    《Journal of Crystal Growth》 |2012年第2012期|147-151|共5页
  • 作者单位

    Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China;

    Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China;

    Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China;

    Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China;

    Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China;

    Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1. Composition; A1. Structure; A3. Pulsed Laser Deposition; A3. Sputtering; B1. Cu_2ZnSnS_4; B2. Optical properties;

    机译:A1。组成;A1。结构体;A3。脉冲激光沉积A3。溅射;B1。 Cu_2ZnSnS_4;B2。光学性质;

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