...
机译:溅射和脉冲激光沉积单一季铵靶Cu_2ZnSnS_4薄膜的比较研究。
Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China;
Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China;
Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China;
Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China;
Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China;
Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China;
A1. Composition; A1. Structure; A3. Pulsed Laser Deposition; A3. Sputtering; B1. Cu_2ZnSnS_4; B2. Optical properties;
机译:燃烧法制备的单个四元硫化物靶材的脉冲激光沉积Cu2ZnSnS4薄膜
机译:后硫化对单四元靶溅射沉积Cu_2ZnSnS_4薄膜的组成,结构和光学性能的影响
机译:电子和光电应用热蒸发,脉冲激光沉积和RF溅射方法沉积的ZnO薄膜的比较研究
机译:电子束沉积,离子镀,离子辅助沉积和双离子束溅射沉积二氧化硅薄膜IR和UV激光损伤电阻的对比研究
机译:通过中和离子束溅射和脉冲激光沉积沉积的n型薄膜透明导电氧化物的电学和光学性质的制备和表征。
机译:磁控溅射与TiO2和BFCO薄膜的脉冲激光沉积相结合
机译:通过脉冲激光沉积和磁控溅射沉积的氧化钇稳定的氧化锆薄膜