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首页> 外文期刊>Journal of Crystal Growth >Ga and In incorporation rates in Ga_(1-x)In_xAs growth by chemical beam epitaxy
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Ga and In incorporation rates in Ga_(1-x)In_xAs growth by chemical beam epitaxy

机译：通过化学束外延生长Ga_（1-x）In_xAs中的Ga和In掺入率

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摘要

GaAs, InAs and Ga_(1-x)In_xAs layers were grown by chemical beam epitaxy (CBE) using triethylgallium, trimethylindium and tertiarybutylarsine as precursors for Ga, In and As, respectively. The growth rate during the homoepitaxial growth of GaAs and InAs, deduced from the frequency of reflection high-energy electron diffraction intensity oscillations, was used to calibrate the incorporation rates for the III elements. The In content of the Ga_(1-x)In_xAs layers was measured by Rutherford backscattering spectro-metry and compared with the value predicted from the above calibration data; while the measured In mole fraction is close to the predicted value for the samples grown for low In to Ga flux ratios (x < 0.2), the In incorporation is enhanced for larger values of this ratio. The results obtained on layers grown at different substrate temperatures show that In mole fraction is almost constant at growth temperatures in the range 400-500 ℃, but a strong dependence on the substrate temperature has been found outside this range. The above results, not observed for samples grown by solid source molecular beam epitaxy, indicate that some interaction between Ga and In precursors at the sample surface could take place during the growth by CBE.
机译：使用三乙基镓，三甲基铟和叔丁基ar分别作为Ga，In和As的前体，通过化学束外延（CBE）生长GaAs，InAs和Ga_（1-x）In_xAs层。从反射高能电子衍射强度振荡的频率推导GaAs和InAs的同质外延生长期间的生长速率，用于校准III族元素的掺入速率。 Ga_（1-x）In_xAs层的In含量通过卢瑟福反向散射光谱法测量，并与根据上述校准数据预测的值进行比较；对于低In与Ga的通量比（x <0.2）生长的样品，测得的In摩尔分数接近于预测值，对于该比例的较大值，In掺入量增加。在不同基板温度下生长的层上获得的结果表明，在400-500℃范围内的生长温度下，In摩尔分数几乎恒定，但是在该范围之外发现了对基板温度的强烈依赖性。对于通过固体源分子束外延生长的样品未观察到上述结果，表明在样品表面上Ga和In前驱物之间的某些相互作用可能在CBE生长过程中发生。

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  • 来源
    《Journal of Crystal Growth》 |2011年第1期|p.48-52|共5页
  • 作者

    D. Ghita; J. Plaza; M. Sanchez; A. Climent-Font; B.J. Garcia;

  • 作者单位

    Laboratorio de Electronica y Semiconductors, Departamento de Fisica Aplicada, Universidad Autonoma de Madrid, 28049 Madrid, Spain;

    Departamento de Investigation, Centro de Investigation y Desarrollo de la Armada, Arturo Soria 289, 28033 Madrid, Spain;

    Facultad de Fisica, Universidad de La Habana, San Lazaro y L, Vedado, 10400 La Habana, Cuba;

    Departamento de Fisica Aplicada and Centro de Micro-Analisis de Materiales, Universidad Autonoma de Madrid, 28049 Madrid, Spain;

    Laboratorio de Electronica y Semiconductors, Departamento de Fisica Aplicada, Universidad Autonoma de Madrid, 28049 Madrid, Spain;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A3. Chemical beam epitaxy; B2. Semiconducting Ⅲ-Ⅴ materials; B2. Semiconducting ternary compounds;

    机译：A3。化学束外延;B2。半导体Ⅲ-Ⅴ族材料;B2。半导体三元化合物;

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