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首页> 外文期刊>Journal of Crystal Growth >Influence of inclusion on nucleation of silicon casting for photovoltaic (PV) application
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Influence of inclusion on nucleation of silicon casting for photovoltaic (PV) application

机译:夹杂物对光伏(PV)应用中硅铸件形核的影响

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摘要

The photovoltaic (PV) industry has grown rapidly in recent years. The predominant PV material, multicrystalline silicon (mc-Si), is manufactured by relatively low-cost casting methods, especially directional solidification. One factor affecting the quality of cast silicon and the resultant mc-Si solar cells is Si_3N_4 and SiC precipitates and inclusions. These inclusions cause crystal defects, distorted grain structure, decreased wafer yield and quality and even electrical shunts. A Computational Fluid Dynamic (CFD) Simulation tool has been applied to simulate temperatures and flow fields during growth and how they will affect the grain structure under the influence of inclusions. The Cellular Automata Finite Element (CAFE) modeling technique is used to simulate silicon grain growth.
机译:光伏(PV)行业近年来发展迅速。主要的PV材料,多晶硅(mc-Si),是通过相对低成本的铸造方法(尤其是定向凝固)制造的。影响铸硅和所得mc-Si太阳能电池质量的一个因素是Si_3N_4和SiC析出物和夹杂物。这些夹杂物会导致晶体缺陷,晶粒结构变形,晶圆成品率和质量下降,甚至发生电分流。计算流体动力学(CFD)模拟工具已被用于模拟生长过程中的温度和流场,以及它们如何在夹杂物影响下影响晶粒结构。元胞自动机有限元(CAFE)建模技术用于模拟硅晶粒的生长。

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