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首页> 外文期刊>Journal of Crystal Growth >Hydrothermally grown ZnO buffer layer for the growth of highly (4 wt%)Ga-doped ZnO epitaxial thin films on MgAl_2O_4 (111) substrates
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Hydrothermally grown ZnO buffer layer for the growth of highly (4 wt%)Ga-doped ZnO epitaxial thin films on MgAl_2O_4 (111) substrates

机译：水热生长的ZnO缓冲层，用于在MgAl_2O_4（111）衬底上生长高度（4 wt％）掺杂Ga的ZnO外延薄膜

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摘要

Gallium (4 wt%) doped ZnO (GZO) thin films were deposited on hydrothermally grown ZnO buffered and non-buffered MgAl_2O_4 (111) substrates by RF magnetron sputtering technique at a growth temperature of 250 ℃. The epitaxial ZnO buffer layer was deposited on the MgAl_2O_4 (111) substrate by a hydrothermal technique using aqueous solutions of zinc nitrate hexahydrate, ammonium nitrate and ammonium hydroxide at 90 ℃. The effect of the ZnO buffer layer on the crystallinity, epitaxial nature, surface morphology, optical and electrical properties of the GZO thin films is investigated. X-ray diffraction and transmission electron microscopy showed that the hydrothermally grown ZnO buffer layer and GZO thin film grown on the hydrothermally grown ZnO buffered substrate were grown epitaxially with an orientation relationship of (0001)[1120]_(GZO)||(l 11)[112]_(MgAl_2O_4). However, the GZO thin films grown on the non-buffered substrate are polycrystalline in nature with a hexagonal wurtzite phase. The room temperature photoluminescence spectra of the GZO epitaxial thin films grown on the buffered substrate revealed a sharp near band edge emission peak and a lower broad deep-level emission peak compared to the polycrystalline GZO thin film grown on a non-buffered substrate. The electrical resistivity of the GZO thin films is found to be proved from 4.69×10~(-3) to 2.27×10~(-3) fi cm by introducing the hydrothermally grown ZnO buffer layer between the GZO thin film and MgAl_2O_4 (111) substrate.
机译：掺杂镓（4 wt％）的ZnO（GZO）薄膜通过RF磁控溅射技术在250℃的生长温度下沉积在水热生长的ZnO缓冲和非缓冲MgAl_2O_4（111）衬底上。在90℃下，采用六水合硝酸锌，硝酸铵和氢氧化铵的水热技术，在MgAl_2O_4（111）衬底上沉积外延ZnO缓冲层。研究了ZnO缓冲层对GZO薄膜的结晶度，外延性质，表面形态，光学和电学性质的影响。 X射线衍射和透射电子显微镜显示，水热生长的ZnO缓冲层和在水热生长的ZnO缓冲衬底上生长的GZO薄膜以（0001）[1120] _（GZO）||（l）的取向关系外延生长。 11）[112] _（MgAl_2O_4）。但是，在非缓冲基板上生长的GZO薄膜实际上是具有六方纤锌矿相的多晶。与在非缓冲基板上生长的多晶GZO薄膜相比，在缓冲基板上生长的GZO外延薄膜的室温光致发光光谱显示出尖锐的近带边缘发射峰和较低的宽深能级发射峰。通过在GZO薄膜和MgAl_2O_4之间引入水热生长的ZnO缓冲层，可以证明GZO薄膜的电阻率为4.69×10〜（-3）至2.27×10〜（-3）fi cm。（111 ） 基质。

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  • 来源
    《Journal of Crystal Growth》 |2011年第1期|p.45-50|共6页
  • 作者

    Seung Wook Shin; Ye Bin Kwon; A.V. Moholkar; Gi-Seok Heo; In Ok Jung; Jong-Ha Moon; Jin Hyeok Kim; Jeong Yong Lee;

  • 作者单位

    Department of Materials Science and Engineering, KAIST, 335 Gwahangno, Yuseong-gu, Daejeon 305-701, South Korea;

    Photonics Technology Research Institute, Department of Materials Science and Engineering, Chonnam National University, 300 Yongbong-Dong, Puk-Gu, Gwangju 500-757,South Korea;

    Department of Physics, Gopal Krishna Gokhale College, Kolhapur 416 012, Maharashtra, India;

    Development of Advanced Components & Materials, Korea Institute of Industrial Technology, Gwangju 500-480, South Korea;

    Photonics Technology Research Institute, Department of Materials Science and Engineering, Chonnam National University, 300 Yongbong-Dong, Puk-Gu, Gwangju 500-757,South Korea;

    Department of Materials Science and Engineering, KAIST, 335 Gwahangno, Yuseong-gu, Daejeon 305-701, South Korea;

    Photonics Technology Research Institute, Department of Materials Science and Engineering, Chonnam National University, 300 Yongbong-Dong, Puk-Gu, Gwangju 500-757,South Korea;

    Department of Materials Science and Engineering, KAIST, 335 Gwahangno, Yuseong-gu, Daejeon 305-701, South Korea;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1. X-ray diffraction; A2. Hydrothermal crystal growth; A2. Single crystal growth; B1. Oxide; B2. Semiconducting Ⅱ-Ⅴ materials;

    机译：A1。 X射线衍射;A2。水热晶体生长;A2。单晶生长;B1。氧化物;B2半导体Ⅱ-Ⅴ类材料;

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