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Metastable II—VI sulphides: Growth, characterization and stability

机译:亚稳态II-VI硫化物:生长,表征和稳定性

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Among the II-VI compounds, many sulphides have the stable rocksalt structure, but can also be grown by MBE in the metastable zinc blende (ZB) form in epitaxial thin films, including MgS and MnS. By using a metal rich growth regime where sulphur is supplied from the evaporation of ZnS, we have shown that layers of both MgS and MnS up to 140 nm thick can be grown in the ZB structure, allowing the production of different multilayer structures exploiting the properties of these novel semiconductors. This review concentrates on developments in MgS, which we have studied in greater detail than the other compounds and has proved a very versatile component of multilayer structures. These include the development of new metastable MgS-rich ZnMgSSe quaternary alloys, which we have been able to incorporate into structures with MgS and have used to develop a new lift off technology. Comparison of the growth of MgS, ZnMgS and ZnMgSSe has allowed us to determine the incorporation coefficients of Zn and Mg, which are approximately 0.03 and 0.4, respectively. The Zn flux appears to play a crucial role in the development of the film, by forming a ZnMgS surface layer, aiding transport of material across the surface and increasing the energy barrier to conversion to the stable rocksalt phase. TEM shows that occasionally both ZB and RS phases may be present simultaneously. The small RS inclusions seem to stabilise the ZB phase against relaxation and do not propagate through the crystal. Examination of the totally converted films suggests that they are composed of different rocksalt domains and may not have transformed via the mechanism which has been suggested as the lowest route for bulk MgS.
机译:在II-VI化合物中,许多硫化物具有稳定的岩盐结构,但也可通过MBE以亚稳态锌共混物(ZB)的形式在包括MgS和MnS的外延薄膜中生长。通过使用从ZnS的蒸发中供应硫的富金属生长机制,我们已经表明,可以在ZB结构中生长高达140 nm厚的MgS和MnS层,从而允许利用该特性生产不同的多层结构这些新型半导体。这篇综述集中在MgS的发展上,我们已经比其他化合物更详细地研究了MgS,并证明了MgS是多层结构的一种非常通用的组件。其中包括开发新的富含MgS的亚稳态ZnMgSSe四元合金,我们已经能够将其与MgS结合到结构中,并用于开发新的剥离技术。通过比较MgS,ZnMgS和ZnMgSSe的生长,我们可以确定Zn和Mg的掺入系数,分别约为0.03和0.4。锌通量似乎通过形成ZnMgS表面层,辅助材料在整个表面上的传输以及增加能量转换成稳定的岩盐相的过程,在薄膜的显影中起关键作用。 TEM显示,有时ZB和RS相可能同时存在。小的RS夹杂物似乎可以稳定ZB相以防止松弛,并且不会通过晶体传播。对完全转化膜的检查表明它们是由不同的岩盐域组成的,并且可能没有通过已被建议为大量MgS最低途径的机理进行转化。

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