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首页> 外文期刊>Journal of Crystal Growth >Selective growth of InSb on localized area of Si(l 0 0) by molecular beam epitaxy
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Selective growth of InSb on localized area of Si(l 0 0) by molecular beam epitaxy

机译：分子束外延对InSb在Si（l 0 0）局部区域的选择性生长

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摘要

The selective growth of InSb on patterned SiO_2 on Si substrates by molecular beam epitaxy has been studied. Crystal nuclei grow selectively on bare Si window areas above 500 °C, whereas they get deposited on the SiO_2 areas at 400 °C. The X-ray diffraction results indicate that these nuclei consist of metal In and InSb. XRD peaks of InSb in several directions are observed. Two types of surface morphologies, i.e., those with smooth and those with rugged outlines, are observed on the crystal nuclei. The stoichiometric analysis suggests that the area enclosed by a smooth outline is composed of metal In. It is observed that this area decreases with an increase in the V/HI flux ratio. A single nucleus can be fabricated on a bare Si window area using a square pattern with an area of 1.0×1.0 μm2.
机译：研究了分子束外延法在Si衬底上的SiO_2图形上选择性生长InSb。晶核在高于500°C的裸露Si窗口区域选择性生长，而在400°C时它们沉积在SiO_2区域。 X射线衍射结果表明这些核由金属In和InSb组成。观察到InSb在几个方向上的XRD峰。在晶核上观察到两种类型的表面形态，即具有光滑的表面形态和具有粗糙的轮廓的表面形态。化学计量分析表明，光滑轮廓所包围的区域由金属In组成。观察到该面积随着V / HI通量比的增加而减小。可以使用面积为1.0×1.0μm2的正方形图案在裸露的Si窗口区域上制造单个核。

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  • 来源
    《Journal of Crystal Growth》 |2011年第1期|p.397-400|共4页
  • 作者

    Shinsuke Hara; Tomoaki lida; Yuichi Nishino; Akinori Uchida; Hiroyuki Horii; Hiroki I. Fujishiro;

  • 作者单位

    Department of Applied Electronics, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, fapan;

    Department of Applied Electronics, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, fapan;

    Department of Applied Electronics, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, fapan;

    Department of Applied Electronics, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, fapan;

    Department of Applied Electronics, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, fapan;

    Department of Applied Electronics, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, fapan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A3. Molecular beam epitaxy; A3. Selective epitaxy; B1. Antimonides; B2. Semiconducting indium compounds; B2. Semiconducting silicon;

    机译：A3。分子束外延;A3。选择性外延;B1。锑;B2。半导体铟化合物;B2。半导体硅;

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