Effect of excitons on the absorption in the solar-cell with AlGaAs/GaAs superlattice grown by molecular beam epitaxy

著录项

• 来源
  《Journal of Crystal Growth》 |2011年第1期|p.504-507|共4页
• 作者

  A. Kawaharazuka; K. Onomitsu; J. Nishinaga; Y. Horikoshi;

  展开▼
• 作者单位

  Waseda Institute for Advanced Study (WIAS), Waseda University, J-6-J Nishi-Waseda, Shinjuku, Tokyo 169-8050,Japan,Faculty of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 769-8555, Japan,Kagami Memorial Laboratory for Materials Science and Technology, Waseda University, 2-8-26 Nishi-Waseda, Shinjuku, Tokyo 169-0051, Japan,CREST, Japan Science and Technology Agency, Sanbancho 5, Chiyoda, Tokyo 102-0075, Japan;

  NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan;

  Waseda Institute for Advanced Study (WIAS), Waseda University, J-6-J Nishi-Waseda, Shinjuku, Tokyo 169-8050,Japan,Kagami Memorial Laboratory for Materials Science and Technology, Waseda University, 2-8-26 Nishi-Waseda, Shinjuku, Tokyo 169-0051, Japan,CREST, Japan Science and Technology Agency, Sanbancho 5, Chiyoda, Tokyo 102-0075, Japan;

  Faculty of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 769-8555, Japan,Kagami Memorial Laboratory for Materials Science and Technology, Waseda University, 2-8-26 Nishi-Waseda, Shinjuku, Tokyo 169-0051, Japan,NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan;

  展开▼
• 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  A3. Molecular beam epitaxy; A3. Superlattices; B2. Semiconducting gallium arsenide; B3. Solar cells;

  机译：A3。分子束外延;A3。超晶格;B2。半导体砷化镓;B3。太阳能电池;