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首页> 外文期刊>Journal of Crystal Growth >Growth and characterization of mid-infrared microdisk lasers operating in continuous-wave mode up to 2 °C
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Growth and characterization of mid-infrared microdisk lasers operating in continuous-wave mode up to 2 °C

机译:在高达2°C的连续波模式下运行的中红外微盘激光器的生长和表征

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摘要

Growth and characterization of lead salt microdisk lasers with near-room-temperature continuous-wave (cw) emission at mid-infrared wavelengths around 4.3 urn is reported. The laser structures were grown by molecular beam epitaxy on BaF2 substrates and consist of a PbSe single quantum well embedded in Pb_(0.94)Sr_(0.06)Se barrier layers. Under optical excitation, cw lasing is obtained up to temperatures of 275 K, i.e., 2 °C. With increasing pump power, the narrow laser line shifts to shorter wavelengths, from which an internal temperature of about 20 °C is estimated. We also find a good agreement between the observed laser lines and the calculated optical microdisk resonator modes.
机译:据报道,铅盐微盘激光器在4.3 um左右的中红外波长具有近室温连续波(cw)发射,具有一定的生长和特性。激光结构通过分子束外延生长在BaF2衬底上,并由嵌入Pb_(0.94)Sr_(0.06)Se势垒层中的PbSe单量子阱组成。在光激发下,获得高达275 K,即2°C的连续激光发射。随着泵浦功率的增加,窄激光线转移到较短的波长,据此可以估计内部温度约为20°C。我们还发现观察到的激光线与计算出的光学微盘谐振器模式之间有很好的一致性。

著录项

  • 来源
    《Journal of Crystal Growth》 |2011年第1期|p.460-462|共3页
  • 作者单位

    Institut fuer Halbleiter- und Festkoerperphysik, Johannes Kepler Universitat Linz, AltenbergerstraBSe 69, A-4040 Linz, Austria;

    Institut fuer Halbleiter- und Festkoerperphysik, Johannes Kepler Universitat Linz, AltenbergerstraBSe 69, A-4040 Linz, Austria;

    Institut fuer Halbleiter- und Festkoerperphysik, Johannes Kepler Universitat Linz, AltenbergerstraBSe 69, A-4040 Linz, Austria;

    Institut fuer Halbleiter- und Festkoerperphysik, Johannes Kepler Universitat Linz, AltenbergerstraBSe 69, A-4040 Linz, Austria;

    Institut fuer Halbleiter- und Festkoerperphysik, Johannes Kepler Universitat Linz, AltenbergerstraBSe 69, A-4040 Linz, Austria;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1. Low dimensional structures; A3. Molecular beam epitaxy; A3. Quantum wells; B2. Semiconducting lead compounds; B3. Optically pumped lasers; B3. Infrared devices;

    机译:A1。低维结构;A3。分子束外延;A3。量子阱;B2。半导体铅化合物;B3。光泵浦激光器;B3。红外线设备;

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