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首页> 外文期刊>Journal of Crystal Growth >Growth of GaN films with low oxygen concentration using Ga_2O vapor and NH_3
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Growth of GaN films with low oxygen concentration using Ga_2O vapor and NH_3

机译：利用Ga_2O蒸气和NH_3生长低氧浓度的GaN薄膜

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摘要

In this study, we investigated the relationship between surface morphology and oxygen concentration in GaN layers synthesized from Ga_2O vapor and NH_3. The surface morphology of GaN layers changed from rough (with large numbers of pits) to (0001) smooth planes with the increase in NH_3 concentration. SIMS mapping analysis revealed that the oxygen concentration was on the order of 10~(17) atoms/cm~3, the lowest level obtained in GaN layers synthesized from Ga_2O vapor and NH_3, at the smooth (0001) surfaces. By contrast, high oxygen concentration over 10~(20) atoms/cm~3 was detected at the pitted areas. We concluded that GaN films with low oxygen contamination can be obtained by suppressing pit formation and promoting the smoothness of the (0001) surface, even when using Ga_2O as the Ga source.
机译：在这项研究中，我们研究了由Ga_2O蒸气和NH_3合成的GaN层中表面形貌与氧浓度之间的关系。随着NH_3浓度的增加，GaN层的表面形态从粗糙（具有大量凹坑）变为（0001）光滑平面。 SIMS作图分析表明，在光滑（0001）表面，氧浓度约为10〜（17）原子/ cm〜3，是由Ga_2O蒸气和NH_3合成的GaN层中最低的。相反，在凹坑区域检测到高氧浓度超过10〜（20）原子/ cm〜3。我们得出的结论是，即使使用Ga_2O作为Ga源，也可以通过抑制凹坑的形成并提高（0001）表面的光滑度来获得低氧污染的GaN膜。

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  • 来源
    《Journal of Crystal Growth》 |2011年第1期|p.89-93|共5页
  • 作者

    Yuan Bu; Mamoru Imade; Hiroki Kishimoto; Masashi Yoshimura; Takatomo Sasaki; Yasuo Kitaoka; Masashi Isemura; Yusuke Mori;

  • 作者单位

    Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, Yamadaoka 2-1. Suita. Osaka 565-0871, Japan;

    Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, Yamadaoka 2-1. Suita. Osaka 565-0871, Japan;

    Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, Yamadaoka 2-1. Suita. Osaka 565-0871, Japan;

    Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, Yamadaoka 2-1. Suita. Osaka 565-0871, Japan;

    Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, Yamadaoka 2-1. Suita. Osaka 565-0871, Japan;

    Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, Yamadaoka 2-1. Suita. Osaka 565-0871, Japan;

    Itochu Plastics Inc., Shibuya Mark City West Bldg, 1-12-1, Dohgenzaka, Shibuya-ku, Tokyo 150-8525. Japan;

    Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, Yamadaoka 2-1. Suita. Osaka 565-0871, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1. Impurities; A2. Single crystal growth; A3. Vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III-V materials;

    机译：A1。杂质;A2。单晶生长;A3。气相外延;B1。氮化物;B2。半导体III-V材料;

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