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首页> 外文期刊>Journal of Crystal Growth >Growth of GaN epilayers on c-, m-, a-, and (20.1)-plane GaN bulk substrates obtained by ammonothermal method
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Growth of GaN epilayers on c-, m-, a-, and (20.1)-plane GaN bulk substrates obtained by ammonothermal method

机译：通过氨热法获得的c，m，a和（20.1）面GaN体衬底上GaN外延层的生长

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摘要

GaN epilayers were grown by metalorganic chemical vapor deposition (MOCVD) on c-, m-, a-, and (20.1 )-plane GaN substrates obtained by the ammonothermal method. The influence of (i) the surface preparation of substrates, (ii) MOCVD growth parameters, and (iii) the crystallographic orientation of substrates on the structural and optical properties of GaN epilayers was investigated and carefully analyzed. It was observed that the polishing of substrates and their misorientation have strong impact on the quality of GaN epilayers grown on these substrates. The MOCVD growth process was optimized for epilayers grown on m-plane GaN substrates. The best structural and optical properties were achieved for epilayers deposited at 1075℃ and the total reactor pressure of 50 mbar. These conditions were applied to grow GaN epilayers on substrates with other (c-, a-, and (20.1 )-plane) crystallographic orientations in the same MOCVD process. Particularly good optical properties were obtained for GaN epilayers deposited on polar and non-polar (m- and a-plane) substrates, whereas slightly worse optical properties were observed for epilayers deposited on the semi-polar substrate. It therefore means that MOCVD growth conditions optimized for a given crystallographic direction (m-plane direction in this case) work rather well also for other crystallographic directions.
机译：通过金属有机化学气相沉积（MOCVD）在通过氨热法获得的c，m，a和（20.1）面GaN衬底上生长GaN外延层。研究并仔细分析了（i）衬底的表面制备，（ii）MOCVD生长参数和（iii）衬底的晶体学取向对GaN外延层的结构和光学性能的影响。观察到衬底的抛光及其取向错误对在这些衬底上生长的GaN外延层的质量有很大影响。 MOCVD生长工艺针对在m面GaN衬底上生长的外延层进行了优化。在1075℃和50 mbar的总反应器压力下沉积的外延层具有最佳的结构和光学性能。这些条件适用于在同一MOCVD工艺中在具有其他（c-，a-和（20.1）平面）晶体取向的衬底上生长GaN外延层。对于沉积在极性和非极性（m平面和a平面）衬底上的GaN外延层，可以获得特别好的光学性能，而对于沉积在半极性衬底上的外延层则观察到了稍差的光学性能。因此，这意味着针对给定的晶体学方向（在这种情况下为m平面方向）优化的MOCVD生长条件对于其他晶体学方向也同样适用。

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  • 来源
    《Journal of Crystal Growth》 |2011年第1期|p.5-12|共8页
  • 作者

    M. Rudzinski; R. Kudrawiec; L Janicki; J. Serafinczuk; R. Kucharski; M. Zajac; J. Misiewicz; R. Doradzinski; R. Dwilinski; W. Strupinski;

  • 作者单位

    Institute of Electronic Materials Technology, Wdlczynska 133, 01-919 Warsaw, Poland;

    Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland;

    Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland;

    Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-372 Wroclaw, Poland;

    AMMONO sp. Z.o.o., Czerwonego Krzyza 2/31, 00-377 Warsaw, Poland;

    AMMONO sp. Z.o.o., Czerwonego Krzyza 2/31, 00-377 Warsaw, Poland;

    Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland;

    AMMONO sp. Z.o.o., Czerwonego Krzyza 2/31, 00-377 Warsaw, Poland;

    AMMONO sp. Z.o.o., Czerwonego Krzyza 2/31, 00-377 Warsaw, Poland;

    Institute of Electronic Materials Technology, Wdlczynska 133, 01-919 Warsaw, Poland;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1. MOCVD; A2. GaN; B1. X-ray diffraction; B2. Optical properties;

    机译：A1。 MOCVD;A2。氮化镓;B1。 X射线衍射;B2。光学性质;

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