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首页> 外文期刊>Journal of Crystal Growth >Unidirectional growth of sulphamic acid single crystal and its quality analysis using etching, microhardness, HRXRD, UV-visible and Thermogravimetric-Differential thermal characterizations
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Unidirectional growth of sulphamic acid single crystal and its quality analysis using etching, microhardness, HRXRD, UV-visible and Thermogravimetric-Differential thermal characterizations

机译：氨基磺酸单晶的单向生长及其使用蚀刻，显微硬度，HRXRD，紫外可见和热重差热表征的质量分析

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摘要

A uniaxial sulphamic acid single crystal having dimensions of 35 mm diameter and 150 mm length was grown. Employing slow evaporation technique sulphamic acid crystals of size 10 × 10 × 5 mm~3 were grown. Etching, microhardness, high-resolution X-ray diffraction, laser damage threshold, UV-visible, Thermogravimetric and differential thermal analysis were made on conventional and the Sankaranarayanan-Ramasamy method grown sulphamic acid crystals. Etching behaviour of the (100) plane of conventional and the Sankaranarayanan-Ramasamy method grown sulphamic acid crystals was investigated with different etchants. Vicker's microhardness test on the (100) plane confirmed the mechanical stability of the conventional and the Sankaranarayanan-Ramasamy method grown sulphamic acid crystals. High-resolution X-ray diffraction results show that the crystalline perfection of sulphamic acid single crystals grown by the Sankaranarayanan-Ramasamy method is extremely good compared to the conventional slow evaporation method grown sulphamic acid crystal. Thermogravimetric and differential thermal analysis was carried out to determine the thermal properties of the grown crystal.
机译：生长具有35mm直径和150mm长度的尺寸的单轴氨基磺酸单晶。使用慢蒸发技术，生长出尺寸为10×10×5 mm〜3的氨基磺酸晶体。蚀刻，显微硬度，高分辨率X射线衍射，激光损伤阈值，紫外可见光，热重分析和差热分析均采用常规方法和Sankaranarayanan-Ramasamy方法生长的氨基磺酸晶体进行。用不同的蚀刻剂研究了常规和Sankaranarayanan-Ramasamy方法生长的氨基磺酸晶体的（100）平面的蚀刻行为。维氏在（100）面上的显微硬度测试证实了常规方法和Sankaranarayanan-Ramasamy方法生长的氨基磺酸晶体的机械稳定性。高分辨率X射线衍射结果表明，与传统的慢蒸发法生长的氨基磺酸晶体相比，通过Sankaranarayanan-Ramasamy方法生长的氨基磺酸单晶的晶体完美度非常好。进行热重分析和差热分析以确定所生长晶体的热性质。

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  • 来源
    《Journal of Crystal Growth》 |2010年第3期|397-401|共5页
  • 作者

    M. Senthil Pandian; Urit Charoen In; P. Ramasamy; Prapun Manyum; M. Lenin; N. Balamurugan;

  • 作者单位

    Centre for Crystal Growth, SSN College of Engineering, Kalavakkam, Tamilnadu 603110, India;

    rnSchool of Physics, Institute of Science, Suranaree University of Technology, Nakhon Ratchasima, Muang-30000, Thailand;

    rnCentre for Crystal Growth, SSN College of Engineering, Kalavakkam, Tamilnadu 603110, India;

    rnSchool of Physics, Institute of Science, Suranaree University of Technology, Nakhon Ratchasima, Muang-30000, Thailand;

    rnCrystal Growth Centre, Anna University, Chennai, Tamilnadu 600025, India;

    rnCentre for Crystal Growth, SSN College of Engineering, Kalavakkam, Tamilnadu 603110, India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1. Defects; A1. Etching; A1. High-resolution X-ray diffraction; A1. Impurities; A2. Growth from solutions; A2. Single crystal growth;

    机译：A1。缺陷;A1。蚀刻;A1。高分辨率X射线衍射;A1。杂质;A2。解决方案的增长;A2。单晶生长;

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