Preparation and characterization of BiFeO_3/LaNiO_3 heterostructure films grown on silicon substrate

著录项

• 来源
  《Journal of Crystal Growth》 |2010年第4期|617-620|共4页
• 作者

  Y.W. Li; Y.D. Shen; F.Y. Yue; Z.G. Hu; X.M. Ma; J.H. Chu;

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• 作者单位

  Key Laboratory of Polar Materials and Devices of Ministry of Education, East China Normal University, Shanghai 200241, People's Republic of China Department of Physics, East China Normal University, Shanghai 200241, People's Republic of China National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;

  rnKey Laboratory of Polar Materials and Devices of Ministry of Education, East China Normal University, Shanghai 200241, People's Republic of China Department of Physics, East China Normal University, Shanghai 200241, People's Republic of China National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;

  rnKey Laboratory of Polar Materials and Devices of Ministry of Education, East China Normal University, Shanghai 200241, People's Republic of China Department of Physics, East China Normal University, Shanghai 200241, People's Republic of China National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;

  rnKey Laboratory of Polar Materials and Devices of Ministry of Education, East China Normal University, Shanghai 200241, People's Republic of China Department of Physics, East China Normal University, Shanghai 200241, People's Republic of China National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;

  rnKey Laboratory of Polar Materials and Devices of Ministry of Education, East China Normal University, Shanghai 200241, People's Republic of China Department of Physics, East China Normal University, Shanghai 200241, People's Republic of China National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;

  rnKey Laboratory of Polar Materials and Devices of Ministry of Education, East China Normal University, Shanghai 200241, People's Republic of China Department of Physics, East China Normal University, Shanghai 200241, People's Republic of China National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  A3. Polycrystalline deposition; B1. Perovskite; B2. Ferroelectric materials; B2. Dielectric material.;

  机译：A3。多晶沉积;B1。钙钛矿;B2。铁电材料;B2。介电材料。;