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首页> 外文期刊>Journal of Crystal Growth >Characterization of detector-grade CdZnTe crystals grown by traveling heater method (THM)
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Characterization of detector-grade CdZnTe crystals grown by traveling heater method (THM)

机译:通过行进加热器方法(THM)生长的检测器级CdZnTe晶体的表征

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摘要

This work focuses on the 3. Resultsanddiscussioncharacterization of 10 × 10 × 10 mm~3 THM-grown CdZnTe detector-grade crystals that have been post-growth annealed to remove the secondary phases (SPs). All three detectors showed an average energy resolution of ~ 1.63% for a small guarded pixel with 3.5 mm diameter, measured using ~(137)Cs-662 keV with an average peak-to-Compton ratio of 2.7. The characterization showed vestiges of SPs and micro-twins present in some of the crystals indicating that the SPs prior to annealing were large and had size in the range of 100-500 μm. The various detectable structural features, such as micron twins, strains and sub-micron level of Te inclusions seemed to have little or no influence in the radiation spectrometer performance of the detectors; this is possibly because they are either having low density or electrically inactive.
机译:这项工作着眼于3。10×10×10mm〜3 THM生长的CdZnTe探测器级晶体的结果和讨论特性,该晶体已进行了后生长退火以去除第二相(SP)。对于直径为3.5 mm的小保护像素,所有三个探测器均显示出约1.63%的平均能量分辨率,使用〜(137)Cs-662 keV测量,平均峰/康顿比为2.7。表征显示在一些晶体中存在SP和微孪晶的痕迹,这表明退火之前的SP较大并且尺寸在100-500μm的范围内。各种可检测的结构特征,例如微米孪晶,应变和Te夹杂物的亚微米水平,似乎对探测器的辐射光谱仪性能几乎没有影响。这可能是因为它们密度低或无电。

著录项

  • 来源
    《Journal of Crystal Growth》 |2010年第4期|507-513|共7页
  • 作者单位

    Redlen Technologies, Sidney, B.C., Canada V8L 5Y8;

    rnRedlen Technologies, Sidney, B.C., Canada V8L 5Y8;

    rnRedlen Technologies, Sidney, B.C., Canada V8L 5Y8;

    rnRedlen Technologies, Sidney, B.C., Canada V8L 5Y8;

    rnRedlen Technologies, Sidney, B.C., Canada V8L 5Y8;

    rnSavannah River National Laboratory, Aiken, SC 29808, USA;

    rnFisk University, Nashville, TN 37208-3051, USA;

    rnFisk University, Nashville, TN 37208-3051, USA;

    rnFisk University, Nashville, TN 37208-3051, USA;

    rnLawrence Livermore National Laboratory, Livermore, CA 94550, USA;

    rnLawrence Livermore National Laboratory, Livermore, CA 94550, USA;

    rnLawrence Livermore National Laboratory, Livermore, CA 94550, USA;

    rnNational Institute of Standards and Technology, Gaithersburg, MD 20899, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1.CZT; A2. THM; A2. Secondary phases; A3. Surface treatment;

    机译:A1.CZT;A2。 THM;A2。第二阶段;A3。表面处理;

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