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首页> 外文期刊>Journal of Crystal Growth >Fabrication of high-electron-mobility ZnO epilayers by chemical vapor deposition using catalytically produced excited water
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Fabrication of high-electron-mobility ZnO epilayers by chemical vapor deposition using catalytically produced excited water

机译：使用催化产生的激发水通过化学气相沉积法制备高电子迁移率的ZnO外延层

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Hot H_2O jet evolved by the exothermic reaction of H_2 with O_2 on a Pt-dispersed ZrO_2 catalyst was employed for gas-phase hydrolysis of dimethyl zinc to fabricate thin ZnO films. The X-ray diffraction pattern and photoluminescence spectra showed that the ZnO epilayers directly grown on a-sapphire substrate at 873 K had a defect free crystal structure close to a single crystal. The as-grown ZnO epilayers exhibited average transparency higher than 90% in the visible and infrared regions (400-2000 nm). The epilayers had high electron mobilities of 140-170 cm~2 V~(-1) s~(-1) and low residual electron concentrations of 1.7-6 × 10~(17) cm~(-3) that are significantly better than those for ZnO films so far reported by conventional chemical vapor deposition and any other energy-consuming physical method such as pulse laser deposition and molecular beam epitaxy. The present method uses the chemical energy from only H_2 and O_2, which is energy-saving and ecologically friendly, while it is superior in high-quality ZnO fabrication. It is also pointed out that the method raises unlimited possibilities for a wide range of the fabrication of high-quality metal oxide epilayers, because of the availability for various volatile alkyl metals.
机译：通过在Pt分散的ZrO_2催化剂上H_2与O_2放热反应而放出的热H_2O射流被用于二甲基锌的气相水解以制备ZnO薄膜。 X射线衍射图谱和光致发光光谱表明，直接在873 K的a蓝宝石衬底上生长的ZnO外延层具有接近单晶的无缺陷晶体结构。成长中的ZnO外延层在可见光和红外线区域（400-2000 nm）表现出高于90％的平均透明度。外延层具有140-170 cm〜2 V〜（-1）s〜（-1）的高电子迁移率和1.7-6×10〜（17）cm〜（-3）的低剩余电子浓度，明显更好到目前为止，与传统的化学气相沉积和任何其他耗能的物理方法（例如脉冲激光沉积和分子束外延）所报道的ZnO薄膜相比，ZnO薄膜的性能有所下降。该方法仅使用来自H_2和O_2的化学能，既节能又生态友好，同时在高质量ZnO的制备中具有优势。还需要指出的是，由于可获得各种挥发性烷基金属，该方法为高质量金属氧化物外延层的广泛制造提出了无限可能。

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