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首页> 外文期刊>Journal of Crystal Growth >Selective epitaxial growth of Ge(110) in trenches using the aspect ratio trapping technique
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Selective epitaxial growth of Ge(110) in trenches using the aspect ratio trapping technique

机译：使用长宽比捕获技术在沟槽中选择性地外延生长Ge（110）

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The aim of this study was to assess the efficiency of aspect ratio trapping in improving the crystalline quality of relaxed Ge(1 1 0) layers selectively grown in trenches surrounded by SiO_2. The 400 ℃ growth of a few hundreds of nanometers thick Ge layers has first been studied on blanket Si(1 1 0) surfaces then in recessed areas of Si(1 1 0) patterned wafers. The influence of 1 min H_2 anneals (in-between 600 and 850 ℃) on the surface morphology, crystalline quality and strain state of blanket Ge(1 1 0) layers has notably been quantified. Intermediate annealing temperatures (750 ℃) have improved the crystalline quality and increased the macroscopic strain relaxation of those layers, without too high a surface roughening. (1 1 0) Si windows (surrounded by shallow trench isolation) of patterned wafers have then been recessed by ≈ 300 nm using gaseous HCl, with a definite faceting and a slight roughening of the resulting cavities. Epitaxial lateral overgrowth of Ge has then been implemented in those trenches, followed by 1' H_2 bakes at 750 ℃. Chemical mechanical polishing has been used afterwards to get rid of the several hundreds of nm thick Ge layer overflowing on the SiO_2 areas (very reduced dishing and fiat Ge(1 1 0) surfaces obtained in the end). The efficiency of aspect ratio trapping in reducing the defect density in those Ge(1 1 0) layers is not obvious. Indeed, some trapping of inclined defects in the SiO_2 sidewalls of narrow Ge(1 1 0) patterns (～80 nm long) has been evidenced. However, the theoretically unexpected appearance of defects at 90° to the surface (i.e. normal to (1 1 0)) that were consequently not trapped was detrimental to defect density reduction. Those 90° defects may have arisen from interactions of inclined defects with one another. The reduction of the high defect density in relaxed (110) layers is thus still challenging and requires further investigations.
机译：这项研究的目的是评估纵横比陷阱在提高选择性生长在被SiO_2包围的沟槽中的弛豫Ge（1 1 0）层的晶体质量中的效率。首先在毯状Si（1 1 0）表面上研究了数百纳米厚的Ge层在400℃下的生长，然后在Si（1 1 0）图案化晶片的凹陷区域中进行了研究。 H_2退火（600〜850℃之间）对盖层Ge（1 1 0）层的表面形貌，晶体质量和应变状态的影响已被量化。中间退火温度（750℃）改善了这些层的晶体质量，并增加了这些层的宏观应变松弛，而又没有太高的表面粗糙性。 （1 1 0）使用气态HCl，已构图的晶片的Si窗口（被浅沟槽隔离所围绕）已凹入≈300 nm，且具有一定的刻面并略微粗糙了所得的腔体。然后在这些沟槽中进行了Ge的外延横向过度生长，随后在750℃下进行了1'H_2烘烤。此后已使用化学机械抛光来消除在SiO_2区域上溢出的数百纳米厚的Ge层（最终减少了凹陷和平坦的Ge（1 1 0）表面）。在降低那些Ge（1 1 0）层中的缺陷密度方面，长宽比捕获的效率并不明显。实际上，已经证明在狭窄的Ge（1 1 0）图案（约80 nm长）的SiO_2侧壁中存在一些倾斜缺陷。但是，从理论上讲，与表面成90°角（即垂直于（1 1 0））的缺陷的未曾出现的现象，因此没有被捕获，这对降低缺陷密度是有害的。那些90°缺陷可能是由于倾斜缺陷彼此之间的相互作用而引起的。因此，降低松弛的（110）层中的高缺陷密度仍然是挑战性的，需要进一步研究。

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