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首页> 外文期刊>Journal of Crystal Growth >Crystal quality improvement of a-plane GaN using epitaxial lateral overgrowth on nanorods
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Crystal quality improvement of a-plane GaN using epitaxial lateral overgrowth on nanorods

机译:利用纳米棒上的外延横向过生长来提高a面GaN的晶体质量

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摘要

The crystal quality of a-plane GaN films was improved by using epitaxial lateral overgrowth on nano-rod GaN template. The scanning electron microscope images showed the fully coalesced regrowth process completed within only 2 μm thickness. The a-plane GaN films grown on nano-rod template showed superior surface quality and less surface pits. The on-axis and off-axis FWHMs of X-ray rocking curves decreased with the increase in the etching depth of the nano-rod template. TEM analysis revealed that the dislocation density was reduced to around 1.2 × 10~9 cm~(-2) by the nano-rod epitaxial lateral overgrowth. In addition, the photoluminescence intensity of the a-plane GaN was enhanced significantly. These results demonstrated the opportunity of achieving a-plane GaN films with high crystal quality via nano-rod epitaxial lateral overgrowth.
机译:通过在纳米棒GaN模板上外延横向过度生长,提高了a面GaN膜的晶体质量。扫描电子显微镜图像显示完全融合的再生长过程仅在2μm的厚度内完成。在纳米棒模板上生长的a面GaN膜表现出优异的表面质量和较少的表面凹坑。 X射线摇摆曲线的轴上和轴外FWHM随着纳米棒模板蚀刻深度的增加而降低。 TEM分析表明,纳米棒外延横向过度生长使位错密度降低到1.2×10〜9 cm〜(-2)左右。另外,a面GaN的光致发光强度显着增强。这些结果证明了通过纳米棒外延横向过生长获得具有高晶体质量的a面GaN膜的机会。

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  • 来源
    《Journal of Crystal Growth》 |2010年第8期|p.1316-1320|共5页
  • 作者单位

    Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan 300, ROC;

    rnElectronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, 195 Chung Hsing Road, Section 4 Chu Tung, Hsinchu, Taiwan 310, ROC Department of Electrophysics, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan 300, ROC;

    rnDepartment of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan 300, ROC;

    rnElectronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, 195 Chung Hsing Road, Section 4 Chu Tung, Hsinchu, Taiwan 310, ROC;

    rnDepartment of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan 300, ROC;

    rnDepartment of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan 300, ROC Institute of Lighting and Energy Photonics, National Chiao Tung University, 301 Gaofa 3rd Road, Guiren Township, Tainan, Taiwan 711, ROC;

    rnDepartment of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan 300, ROC;

    rnDepartment of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan 300, ROC;

    rnDepartment of Electrophysics, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan 300, ROC;

    rnElectronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, 195 Chung Hsing Road, Section 4 Chu Tung, Hsinchu, Taiwan 310, ROC;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting gallium compounds; A1. Characterization;

    机译:A3。金属有机化学气相沉积;B1。氮化物;B2。半导体镓化合物;A1。表征;

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