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首页> 外文期刊>Journal of Crystal Growth >Characteristics of thick ZnSe films on quasi-phase-matched (QPM) GaAs substrates
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Characteristics of thick ZnSe films on quasi-phase-matched (QPM) GaAs substrates

机译:准相位匹配(QPM)GaAs衬底上厚ZnSe薄膜的特性

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摘要

We have grown and characterized thick zinc selenide (ZnSe) films up to millimeter thickness on unpatterned gallium arsenide (GaAs) wafers and orientation-patterned substrates by physical vapor transport. The patterns were designed to achieve alternating [001] and [001] orientations. The quality of the films was evaluated by X-ray diffraction, scanning electron microscopy (SEM), and anisotropic etching to determine the morphology and crystallinity. ZnSe films grew epitaxially on the templates and X-ray rocking curves showed full widths at half maximum (FWHM) less than 0.2 . Orientation-patterning up to hundreds of microns film thickness was verified by SEM and etching profiles.
机译:我们已经通过物理气相传输在未图案化的砷化镓(GaAs)晶片和取向图案化的衬底上生长并表征了高达毫米厚度的厚硒化锌(ZnSe)膜。设计图案以实现交替的[001]和[001]方向。通过X射线衍射,扫描电子显微镜(SEM)和各向异性蚀刻来评估膜的质量,以确定其形态和结晶度。 ZnSe薄膜在模板上外延生长,X射线摇摆曲线显示半高全宽(FWHM)小于0.2。通过SEM和蚀刻轮廓验证了高达数百微米膜厚的取向图案。

著录项

  • 来源
    《Journal of Crystal Growth》 |2010年第8期|p.1142-1145|共4页
  • 作者单位

    Northrop Grumman Electronic Systems, 1212 Winterson Road, Linthicum, MD 21090, USA;

    Northrop Grumman Electronic Systems, 600 Hicks Road, Rolling Meadows, IL 60008, USA;

    rnNorthrop Grumman Electronic Systems, 1212 Winterson Road, Linthicum, MD 21090, USA;

    rnNorthrop Grumman Electronic Systems, 1212 Winterson Road, Linthicum, MD 21090, USA;

    Solid State Photonics Laboratory, Stanford University, Stanford, CA 94305, USA;

    Northrop Grumman Electronic Systems, 1212 Winterson Road, Linthicum, MD 21090, USA;

    Northrop Grumman Electronic Systems, 600 Hicks Road, Rolling Meadows, IL 60008, USA;

    rnNorthrop Grumman Electronic Systems, 1212 Winterson Road, Linthicum, MD 21090, USA;

    rnNorthrop Grumman Electronic Systems, 600 Hicks Road, Rolling Meadows, IL 60008, USA;

    rnAir Force Research Laboratory/RYJW, Wright-Patterson AFB, OH 45433, USA;

    rnAir Force Research Laboratory/RYJW, Wright-Patterson AFB, OH 45433, USA;

    rnE.L. Gintzon Laboratory, Stanford University, Stanford, CA 94305, USA;

    Solid State Photonics Laboratory, Stanford University, Stanford, CA 94305, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A3. Physical vapor transport (PVT); B1. Zinc selenide; B3. Optical parametric amplification (OPA); B3. Quasi-phase-matching (QPM); B3. Second harmonic generation (SHG);

    机译:A3。物理蒸气传输(PVT);B1。硒化锌;B3。光学参量放大(OPA);B3。准相位匹配(QPM);B3。二次谐波(SHG);

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