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机译:准相位匹配(QPM)GaAs衬底上厚ZnSe薄膜的特性
Northrop Grumman Electronic Systems, 1212 Winterson Road, Linthicum, MD 21090, USA;
Northrop Grumman Electronic Systems, 600 Hicks Road, Rolling Meadows, IL 60008, USA;
rnNorthrop Grumman Electronic Systems, 1212 Winterson Road, Linthicum, MD 21090, USA;
rnNorthrop Grumman Electronic Systems, 1212 Winterson Road, Linthicum, MD 21090, USA;
Solid State Photonics Laboratory, Stanford University, Stanford, CA 94305, USA;
Northrop Grumman Electronic Systems, 1212 Winterson Road, Linthicum, MD 21090, USA;
Northrop Grumman Electronic Systems, 600 Hicks Road, Rolling Meadows, IL 60008, USA;
rnNorthrop Grumman Electronic Systems, 1212 Winterson Road, Linthicum, MD 21090, USA;
rnNorthrop Grumman Electronic Systems, 600 Hicks Road, Rolling Meadows, IL 60008, USA;
rnAir Force Research Laboratory/RYJW, Wright-Patterson AFB, OH 45433, USA;
rnAir Force Research Laboratory/RYJW, Wright-Patterson AFB, OH 45433, USA;
rnE.L. Gintzon Laboratory, Stanford University, Stanford, CA 94305, USA;
Solid State Photonics Laboratory, Stanford University, Stanford, CA 94305, USA;
A3. Physical vapor transport (PVT); B1. Zinc selenide; B3. Optical parametric amplification (OPA); B3. Quasi-phase-matching (QPM); B3. Second harmonic generation (SHG);
机译:GaAs(100)衬底上掺Cl的ZnSe薄膜中ZnSe自组装量子点的形成和光学性质
机译:在(100)GaAs衬底上生长的Cldoped ZnSe薄膜上自组装ZnSe纳米结构的形成机理
机译:氮掺杂p-ZnO薄膜的特性以及在ZnSe衬底上生长的ZnO / ZnSe p-n异质结
机译:在GaAs(100)基板上生长的CL掺杂ZnSE薄膜中ZnSE自组装量子点的形成和光学性质
机译:纳米厚的铜和铜合金薄膜与刚性基板结合时的应变松弛。
机译:GaAs(001)上生长的高质量100 nm厚InSb膜具有InxAl1-xSb连续渐变缓冲层的基板
机译:Zn和Se光束电离对晶体GaAs基材生长生长的ZnSe膜晶体结构的影响。
机译:通过10.6微米和0.6328微米椭圆偏振仪测量和0.6328微米反射器测量,在KCl基板上的as2s3,as2se3和Znse薄膜中的应变诱导各向异性。