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TlBr and TlBr_xI_(1-x)crystals for γ-ray detectors

机译:用于γ射线探测器的TlBr和TlBr_xI_(1-x)晶体

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摘要

TlBr and TlBr_xI_(1-x) are wide bandgap semiconductor materials being investigated for applications in γ-ray spectroscopy. They have a good combination of density and atomic numbers, promising to make them very efficient detectors. Their low melting points and simple cubic and orthorhombic crystal structures are favorable for bulk crystal growth. However, these semiconductors need to be extremely pure to become useful as radiation detectors. Impurities can lead to charge trapping and scattering, reducing the charge transit lengths and limiting the detector thickness to < 1 mm. Additional purification steps were implemented to improve the purity and mobility-lifetime product (μτ) of electrons. Detector-grade TlBr with the electron μτ product of up to 6 × 10~(-3) cm~2/V has been produced, which allowed operation of detectors up to 15 mm thickness. The ternary TlBr_x~I_(1-x)was investigated at different compositions to vary the bandgap and explore the effect of added TlI on the long term stability of detectors. The material analysis and detector characterization results are included.
机译:TlBr和TlBr_xI_(1-x)是正在研究用于γ射线光谱学的宽带隙半导体材料。它们具有密度和原子序数的良好组合,有望使它们成为非常高效的检测器。它们的低熔点和简单的立方和正交晶体结构有利于块状晶体的生长。但是,这些半导体必须非常纯净,才能用作辐射探测器。杂质会导致电荷捕获和散射,从而缩短电荷传输长度并将检测器厚度限制在<1 mm。实施了额外的纯化步骤以提高电子的纯度和迁移率-寿命乘积(μ)。已经生产出电子级μT乘积最高为6×10〜(-3)cm〜2 / V的探测器级TlBr,这使探测器的厚度可达15 mm。研究了三元TlBr_x〜I_(1-x)在不同组成下的变化,以改变带隙并探索添加的TlI对检测器长期稳定性的影响。包括材料分析和检测器表征结果。

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