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首页> 外文期刊>Journal of Crystal Growth >Electrochemical atomic layer deposition of copper nanofilms on ruthenium
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Electrochemical atomic layer deposition of copper nanofilms on ruthenium

机译：钌上铜纳米膜的电化学原子层沉积

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As ULSI scales to smaller and smaller dimensions, it has become necessary to form layers of materials only a few nm thick. In addition, trenches are now being incorporated in ULSI formation which require conformal coating and will not be amenable to CMP. Atomic layer deposition (ALD) is being developed to address such issues. ALD is the formation of materials layer by layer using self-limiting reactions. This article describes the formation of Cu seed layers (for the Cu damascene process) on a Ru barrier layer. The deposit was formed by the electrochemical analog of ALD, using electrochemical self-limiting reactions which are referred to as underpotential deposition (UPD). Monolayer restricted galvanic displacement was used to form atomic layers of Cu. First Pb UPD was deposited, forming a sacrificial layer, and then a Cu~(2+) solution was flushed into the cell and Pb was exchanged for Cu. A linear dependence was shown for Cu growth over 8 ALD cycles, and STM showed a conformal deposition, as expected for an ALD process. Relative Cu coverages were determined using Auger electron spectroscopy, while absolute Cu coverages were obtained from coulometry during oxidative stripping of the deposits. Use of a Cl~- containing electrolyte results in Cu deposits covered with an atomic layer of Cl atoms, which have been shown to protect the surfaced from oxidation during various stages of the deposition process. The 10 nm thick Ru substrates were formed on Si(100) wafers, and were partially oxidized upon receipt. Electrochemical reduction, prior to Cu deposition, removed the oxygen and some traces of carbon, the result of transport. Ion bombardment proved to clean all oxygen and carbon traces from the surface.
机译：随着ULSI越来越小，必须形成厚度仅为几纳米的材料层。另外，现在正在ULSI形成中合并沟槽，这些沟槽需要保形涂层并且不适用于CMP。为了解决这些问题，正在开发原子层沉积（ALD）。 ALD是使用自限反应逐层形成材料。本文介绍了在Ru阻挡层上形成Cu籽晶层（用于Cu镶嵌工艺）的过程。沉积物是通过ALD的电化学类似物使用电化学自限反应形成的，这被称为欠电势沉积（UPD）。单层限制电流位移被用来形成Cu的原子层。首先沉积Pb UPD，形成牺牲层，然后将Cu〜（2+）溶液冲洗到电解池中，并用Pb交换Cu。如在ALD工艺中所预期的，在8个ALD循环中，Cu的生长表现出线性依赖性，而STM显示出保形沉积。使用俄歇电子能谱法确定了相对的铜覆盖率，而在沉积物的氧化剥离过程中通过库仑法获得了绝对的铜覆盖率。使用含Cl 2-的电解质会导致覆盖有一层Cl原子原子层的Cu沉积物，该沉积物已显示出可以在沉积过程的各个阶段保护表面免受氧化的作用。在Si（100）晶片上形成10 nm厚的Ru衬底，并在接收后部分氧化。在沉积铜之前，通过电化学还原除去了氧气和一些痕量碳，这是运输的结果。离子轰击已证明可以清除表面上的所有氧气和碳痕迹。

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