In situ reflectance monitoring for the MOVPE of strain-balanced InGaAs/GaAsP quantum-wells

著录项

• 来源
  《Journal of Crystal Growth》 |2010年第8期|p.1364-1369|共6页
• 作者

  Yunpeng Wang; Ryusuke Onitsuka; Momoko Deura; Wen Yu; Masakazu Sugiyama; Yoshiaki Nakano;

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• 作者单位

  Research Center for Advanced Science and Technology, The University of Tokyo, Tokyo, Japan;

  rnDepartment of Electrical Engineering and Information Systems, School of Engineering, The University of Tokyo, Tokyo, Japan;

  rnDepartment of Electrical Engineering and Information Systems, School of Engineering, The University of Tokyo, Tokyo, Japan;

  rnResearch Center for Advanced Science and Technology, The University of Tokyo, Tokyo, Japan;

  rnDepartment of Electrical Engineering and Information Systems, School of Engineering, The University of Tokyo, Tokyo, Japan Institute of Engineering innovation, School of Engineering, The University of Tokyo, Tokyo, Japan;

  rnResearch Center for Advanced Science and Technology, The University of Tokyo, Tokyo, Japan;

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• 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  A1. Surface structure; A3. Metalorganic vapor phase epitaxy; B1. Gallium arsenic; B2. Semiconducting III-V materials;

  机译：A1。表面结构;A3。金属有机气相外延;B1。砷化镓;B2。半导体III-V材料;