...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Crystal Growth >Atomic ordering of AlInP grown by MOVPE using TBP with different V/III ratios in pure ambient N_2
【24h】

Atomic ordering of AlInP grown by MOVPE using TBP with different V/III ratios in pure ambient N_2

机译：MOVPE使用纯净环境N_2中具有不同V / III比的TBP生长的AlInP的原子有序

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

CuPt-B type spontaneous atomic ordering has been investigated in AllnP epilayers grown by organometallic vapor phase epitaxy (MOVPE) with different input flux V/III ratios. Transmission electron diffraction (TED) patterns and transmission electron microscopy (TEM) images of the sample confirm the CuPt-B type ordering in the MOVPE-grown AllnP epilayers. At the growth temperature of 630 ℃, the ordering degree of the AllnP epilayer has been found to change with the input flux V/III ratio of the MOVPE growth. The degree of atomic ordering decreases when the input V/III ratio of the MOVPE growth is reduced from 60 to 20. The AllnP epilayer grown with the lower input V/III ratio has a lower ordering degree because of the reduction of the P-P dimer concentration formed on the growing surface during the MOVPE growth. The ordering degree of the AllnP epilayer also decreases when the input V/III ratio in the MOVPE growth increases above 60. This result is attributed to a reduction of the diffusion length of the group III adatoms with the higher V/III ratio during MOVPE growth.
机译：CuPt-B型自发原子有序化已在通过有机金属气相外延（MOVPE）以不同的输入通量V / III比生长的AllnP外延层中进行了研究。样品的透射电子衍射（TED）模式和透射电子显微镜（TEM）图像证实了MOVPE生长的AllnP外延层中的CuPt-B型有序。在630℃的生长温度下，发现AlnP外延层的有序度随MOVPE生长的输入通量V / III比而变化。当MOVPE生长的输入V / III比从60降低到20时，原子有序度降低。以较低的输入V / III比生长的AllnP外延层由于PP二聚体浓度的降低而具有较低的有序度。在MOVPE生长期间形成在生长表面上。当MOVPE生长中的输入V / III比增加到60以上时，AllnP外延层的有序度也降低。该结果归因于MOVPE生长期间具有较高V / III比的III族原子的扩散长度减小。

著录项

  • 来源
    《Journal of Crystal Growth》 |2010年第9期|p.1505-1509|共5页
  • 作者

    Jinghua Zhao; Xiaohong Tang; Jinghua Teng; Anna Marie Yong;

  • 作者单位

    School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore;

    School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore;

    Institute of Material Research and Engineering, 3 Research Link, Singapore 117602, Singapore;

    Institute of Material Research and Engineering, 3 Research Link, Singapore 117602, Singapore;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    A1. Spontaneous atomic ordering; A3. Organometallic vapor phase epitaxy; B2. Semiconducting III-V materials;

    机译：A1。自发原子排序;A3。有机金属气相外延;B2。半导体III-V材料;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号