Morphological, structural and electrical investigations on non-polar a-plane ZnO epilayers

Stefan Lautenschlaeger; rnSebastian Eisermann; rnMichael N. Hofmann; rnUdo Roemer; rnMelanie Pinnisch; rnAndreas Laufer; rnBruno K. Meyer; rnHolger von Wenckstern; rnAlexander Lajn; rnFlorian Schmidt; rnMarius Grundmann; rnJuergen Blaesing; rnAlois Krost

首页> 外文期刊>Journal of Crystal Growth >Morphological, structural and electrical investigations on non-polar a-plane ZnO epilayers

【24h】

Morphological, structural and electrical investigations on non-polar a-plane ZnO epilayers

机译：非极性a平面ZnO外延层的形态，结构和电学研究

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

We report on the growth of non-polar a-plane ZnO by CVD on r-plane-sapphire-wafers, a-plane GaN-templates and a-plane ZnO single-crystal substrates. Only the homoepitaxial growth approach leads to a Frank-van-der-Merwe growth mode, as shown by atomic force microscopy. The X-ray-diffraction spectra of the homoepitaxial thin films mirror the excellent crystalline quality of the ZnO substrate. The morphological and the structural quality of the homoepitaxial films is comparable to the best results for the growth on c-plane ZnO-substrates. The impurity incorporation, especially of group III elements, seems to be reduced when growing on the non-polar a-plane surface compared to the c-plane films as demonstrated by secondary ion mass spectrometry (SIMS). Optical properties have been investigated using low temperature photoluminescence measurements. We employed capacitance-voltage measurements (C-V) to measure the background carrier density and its profile from substrate/film interface throughout the film to the surface. In thermal admittance spectroscopy (TAS) specific traps could be distinguished, and their thermal activation energies and capture cross sections could be determined.

机译：我们报告了在r面蓝宝石晶片，a面GaN模板和a面ZnO单晶衬底上通过CVD生长非极性a面ZnO。如原子力显微镜所示，只有同质外延生长方法会导致Frank-van-der-Merwe生长模式。同质外延薄膜的X射线衍射光谱反映了ZnO衬底的优异结晶质量。同质外延膜的形态和结构质量可与在c平面ZnO衬底上生长的最佳结果相媲美。如二次离子质谱法（SIMS）所示，与c平面膜相比，在非极性a平面表面上生长时，杂质的掺入，尤其是第三族元素的掺入，似乎减少了。使用低温光致发光测量已经研究了光学性质。我们采用电容-电压测量（C-V）来测量背景载流子密度及其从基材/膜界面到整个膜到表面的轮廓。在热导光谱法（TAS）中，可以区分特定的陷阱，并可以确定其热活化能和捕获截面。

著录项

来源
《Journal of Crystal Growth》 |2010年第14期|P.2078-2082|共5页
作者
Stefan Lautenschlaeger; rnSebastian Eisermann; rnMichael N. Hofmann; rnUdo Roemer; rnMelanie Pinnisch; rnAndreas Laufer; rnBruno K. Meyer; rnHolger von Wenckstern; rnAlexander Lajn; rnFlorian Schmidt; rnMarius Grundmann; rnJuergen Blaesing; rnAlois Krost;
展开▼
作者单位

Ist Physics Institute, Justus-Liebig-University Giessen, Heinrich-Buff-Ring 16, 35392 Giessen, Germany;

rnIst Physics Institute, Justus-Liebig-University Giessen, Heinrich-Buff-Ring 16, 35392 Giessen, Germany;

rnIst Physics Institute, Justus-Liebig-University Giessen, Heinrich-Buff-Ring 16, 35392 Giessen, Germany;

rnIst Physics Institute, Justus-Liebig-University Giessen, Heinrich-Buff-Ring 16, 35392 Giessen, Germany;

rnIst Physics Institute, Justus-Liebig-University Giessen, Heinrich-Buff-Ring 16, 35392 Giessen, Germany;

rnIst Physics Institute, Justus-Liebig-University Giessen, Heinrich-Buff-Ring 16, 35392 Giessen, Germany;

rnIst Physics Institute, Justus-Liebig-University Giessen, Heinrich-Buff-Ring 16, 35392 Giessen, Germany;

rnInstitut fuer Experimentelle Physik II, Universitaet Leipzig, Linnestrasse 5, 04103 Leipzig, Germany;

rnInstitut fuer Experimentelle Physik II, Universitaet Leipzig, Linnestrasse 5, 04103 Leipzig, Germany;

rnInstitut fuer Experimentelle Physik II, Universitaet Leipzig, Linnestrasse 5, 04103 Leipzig, Germany;

rnInstitut fuer Experimentelle Physik II, Universitaet Leipzig, Linnestrasse 5, 04103 Leipzig, Germany;

rnInstitute of Experimental Physics, Otto-von-Guericke-University Magdeburg, Universitaetsplatz 2, 39016 Magdeburg, Germany;

rnInstitute of Experimental Physics, Otto-von-Guericke-University Magdeburg, Universitaetsplatz 2, 39016 Magdeburg, Germany;

展开▼
收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类
关键词
A3. Chemical vapor deposition processes; B2. Semiconducting II-VI materials; B1. Oxides;

机译：A3。化学气相沉积工艺;B2。 II-VI半导体材料;B1。氧化物;

相似文献

外文文献
中文文献
专利

1. Effect of Rapid Thermal Annealing on optical and electrical properties of undoped and Ndoped ZnO a-plane epilayers grown by molecular beam epitaxy (MBE) on r-plane oriented sapphire substrates [J] . Mamadou. MBAYE, Ibrahima. NIANG, Bassirou. LO, Journal of applied sciences research . 2016,第2016期

机译：快速热退火对通过分子束外延（MBE）在R平面取向的蓝宝石衬底上生长的未掺杂和N掺杂的ZnO a平面外延层的光学和电学性质的影响
2. Structural and optical properties of non-polar A-plane ZnO films grown on R-plane sapphire substrates by plasma-assisted molecular-beam epitaxy [J] . S.K. Han, S.K. Hong, J.W. Lee, Journal of Crystal Growth . 2007,第2期

机译：等离子体辅助分子束外延在R面蓝宝石衬底上生长的非极性A面ZnO膜的结构和光学性质
3. Inhomogeneous Model for the Investigation of the Optical Properties of the A-Plane Oriented ZnO Epilayers Grown by Plasma-Assisted Molecular Beam Epitaxy [J] . Diouf AA, Lo B, Ngom BD, Journal of Lasers, Optics & Photonics . 2018,第2期

机译：等离子体辅助分子束外延生长A平面取向ZnO外延层光学特性的非均匀模型研究
4. Investigation of the electrical activity of dislocations in ZnO epilayers by transmission electron holography [C] . E Miiller, P Kruse, D Gerthsen, Conference on Microscopy of Semiconducting Materials . 2005

机译：透射电子全能研究ZnO脱落剂位错的电气活性
5. Nanoengineering of ZnO Electrical and Optical Characteristics by Controlling Its Morphology and Defects via Reaction Kinetics, Fluid Dynamics, and Stoichiometry in Low-Pressure CVD Synthesis. [D] . Lim, Taehoon. 2016

机译：通过在低压CVD合成中通过反应动力学，流体动力学和化学计量控制其形态和缺陷来控制ZnO的电学和光学特性的纳米工程。
6. Band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterostructures measured by X-ray photoemission spectroscopy [O] . Ling Sang, Qin Sheng Zhu, Shao Yan Yang, 2014

机译：X射线光发射光谱法测量的非极性A面GaN / AlN和AlN / GaN异质结构的能带偏移
7. Inhomogeneous Model for the Investigation of the Optical Properties of the A-Plane Oriented ZnO Epilayers Grown by Plasma-Assisted Molecular Beam Epitaxy [O] . Diouf AA, Lo B, Ngom BD, 2018

机译：通过等离子体辅助分子束外延生长的A面定向ZnO脱硅的光学性质研究的不均匀模型

Morphological, structural and electrical investigations on non-polar a-plane ZnO epilayers

摘要

著录项

相似文献

相关主题

期刊订阅